Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET - Rahman, I. K. M. Reaz; Khan, Md. Irfan; Khosru, Quazi D. M. (Journal of computational electronics, 2021)
Keywords: Approximation; Boundary conditions; Charge density; Electric fields; Electrical Engineering; Electrons; Electrostatics; Engineering; Indium gallium arsenides; Material properties; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mechanical Engineering; MOSFETs; Nanowires; Optical and Electronic Materials; Physical properties; Poisson equation; Silicon; Theoretical; Threshold voltage; Transistors; Lambert function; Capacitance-voltage characteristics; Gate-all-around; Volume inversion; Electrostatic charge