Topological Surface States of Multicomponent Thermoelectrics Based on Bismuth Telluride
The surface states of Dirac fermions in p -Bi 2 Te 3 , p -Bi 2 – x Sb x Te 3 – y Se y , and p -Bi 2 – x – y Sn x Ge y Te 3 thermoelectrics were studied and its topological characteristics were obtained by scanning tunneling techniques in dependence on compositions. It was shown that the thermoelectr...
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Published in | Semiconductors (Woodbury, N.Y.) Vol. 53; no. 13; pp. 1860 - 1865 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.12.2019
Springer Nature B.V |
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Abstract | The surface states of Dirac fermions in
p
-Bi
2
Te
3
,
p
-Bi
2 –
x
Sb
x
Te
3 –
y
Se
y
, and
p
-Bi
2 –
x
–
y
Sn
x
Ge
y
Te
3
thermoelectrics were studied and its topological characteristics were obtained by scanning tunneling techniques in dependence on compositions. It was shown that the thermoelectric power factor and the material parameter enhance with the shift of the Dirac point to the top of the valence band with the increasing of atomic substitution in these thermoelectrics. A growth contribution of the surface states is determined by an increase of the Fermi velocity for large atomic substitutions of Bi at
x
> 1.5 and small substitutions in the Te sublattice (
y
= 0.06). In compositions with smaller substitutions at
x
= 1–1.3 and
y
= 0.06–0.09, similar effect of the surface states is determined due to raising the surface concentration of charge carriers. |
---|---|
AbstractList | The surface states of Dirac fermions in
p
-Bi
2
Te
3
,
p
-Bi
2 –
x
Sb
x
Te
3 –
y
Se
y
, and
p
-Bi
2 –
x
–
y
Sn
x
Ge
y
Te
3
thermoelectrics were studied and its topological characteristics were obtained by scanning tunneling techniques in dependence on compositions. It was shown that the thermoelectric power factor and the material parameter enhance with the shift of the Dirac point to the top of the valence band with the increasing of atomic substitution in these thermoelectrics. A growth contribution of the surface states is determined by an increase of the Fermi velocity for large atomic substitutions of Bi at
x
> 1.5 and small substitutions in the Te sublattice (
y
= 0.06). In compositions with smaller substitutions at
x
= 1–1.3 and
y
= 0.06–0.09, similar effect of the surface states is determined due to raising the surface concentration of charge carriers. The surface states of Dirac fermions in p-Bi2Te3, p-Bi2 –xSbxTe3 –ySey, and p-Bi2 –x–ySnxGeyTe3 thermoelectrics were studied and its topological characteristics were obtained by scanning tunneling techniques in dependence on compositions. It was shown that the thermoelectric power factor and the material parameter enhance with the shift of the Dirac point to the top of the valence band with the increasing of atomic substitution in these thermoelectrics. A growth contribution of the surface states is determined by an increase of the Fermi velocity for large atomic substitutions of Bi at x > 1.5 and small substitutions in the Te sublattice (y = 0.06). In compositions with smaller substitutions at x = 1–1.3 and y = 0.06–0.09, similar effect of the surface states is determined due to raising the surface concentration of charge carriers. |
Author | Dementev, P. A. Usov, O. A. Lukyanova, L. N. Makarenko, I. V. |
Author_xml | – sequence: 1 givenname: L. N. surname: Lukyanova fullname: Lukyanova, L. N. email: lidia.lukyanova@mail.ioffe.ru organization: Ioffe Institute – sequence: 2 givenname: I. V. surname: Makarenko fullname: Makarenko, I. V. organization: Ioffe Institute – sequence: 3 givenname: O. A. surname: Usov fullname: Usov, O. A. organization: Ioffe Institute – sequence: 4 givenname: P. A. surname: Dementev fullname: Dementev, P. A. organization: Ioffe Institute |
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Cites_doi | 10.1103/RevModPhys.82.3045 10.1103/PhysRevB.82.081305 10.1007/978-3-662-04569-5 10.1103/PhysRevLett.104.016401 10.1103/PhysRevB.86.165119 10.1134/S1063783412110315 10.1103/PhysRevB.90.195413 10.1063/1.4982207 10.1021/nn506920z 10.1016/0022-3697(65)90092-2 10.1021/acs.nanolett.6b03992 10.1038/srep02656 10.1364/OE.22.006165 10.1088/1367-2630/aa6bb9 10.1126/science.1173034 10.1063/1.4747715 10.1063/1.124707 10.1038/srep08830 10.1038/ncomms1588 10.1103/PhysRevB.75.235432 10.1103/PhysRevB.57.R6858 10.1201/b11892 10.1134/S0021364014180039 |
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Keywords | topological insulator Dirac fermions Seebeck coefficient thermoelectric power factor bismuth telluride solid solutions |
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References_xml | – volume: 82 start-page: 3045 year: 2010 ident: 2529_CR4 publication-title: Rev. Mod. Phys. doi: 10.1103/RevModPhys.82.3045 contributor: fullname: M. Z. Hasan – volume-title: Modules, Systems, and Applications in Thermoelectrics year: 2012 ident: 2529_CR29 contributor: fullname: L. N. Lukyanova – ident: 2529_CR12 doi: 10.1103/PhysRevB.82.081305 – volume-title: Thermoelectrics: Basic Principles and New Materials Developments year: 2001 ident: 2529_CR2 doi: 10.1007/978-3-662-04569-5 contributor: fullname: G. S. Nolas – volume: 104 start-page: 016401 year: 2010 ident: 2529_CR9 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.104.016401 contributor: fullname: Z. Alpichshev – volume: 86 start-page: 165119 year: 2012 ident: 2529_CR18 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.86.165119 contributor: fullname: S. Jia – volume: 54 start-page: 2182 year: 2012 ident: 2529_CR27 publication-title: Phys. Solid State doi: 10.1134/S1063783412110315 contributor: fullname: A. N. Veis – volume: 90 start-page: 195413 year: 2014 ident: 2529_CR13 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.90.195413 contributor: fullname: J. Sanchez-Barriga – volume: 110 start-page: 171601 year: 2017 ident: 2529_CR14 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4982207 contributor: fullname: P. Orgiani – volume: 9 start-page: 1886 year: 2015 ident: 2529_CR8 publication-title: ACS Nano doi: 10.1021/nn506920z contributor: fullname: H. Qiao – volume: 26 start-page: 1585 year: 1965 ident: 2529_CR23 publication-title: J. Phys. Chem. Solids doi: 10.1016/0022-3697(65)90092-2 contributor: fullname: D. L. Greenaway – volume: 17 start-page: 255 year: 2017 ident: 2529_CR28 publication-title: Nano Lett. doi: 10.1021/acs.nanolett.6b03992 contributor: fullname: W. S. Whitney – ident: 2529_CR26 – ident: 2529_CR24 – volume: 3 start-page: 2656 year: 2013 ident: 2529_CR17 publication-title: Sci. Rep. doi: 10.1038/srep02656 contributor: fullname: W. Ko – volume: 22 start-page: 6165 year: 2014 ident: 2529_CR7 publication-title: Opt. Express doi: 10.1364/OE.22.006165 contributor: fullname: J. Lee – volume-title: Thermoelectrics Handbook: Macro to Nano year: 2006 ident: 2529_CR3 contributor: fullname: V. A. Kutasov – volume: 19 start-page: 065002 year: 2017 ident: 2529_CR6 publication-title: New J. Phys. doi: 10.1088/1367-2630/aa6bb9 contributor: fullname: M. Sakhdari – volume: 325 start-page: 178 year: 2009 ident: 2529_CR5 publication-title: Science (Washington, DC, U. S.) doi: 10.1126/science.1173034 contributor: fullname: Y. L. Chen – volume: 101 start-page: 081603 year: 2012 ident: 2529_CR20 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4747715 contributor: fullname: M. Chen – ident: 2529_CR15 – volume: 75 start-page: 1401 year: 1999 ident: 2529_CR16 publication-title: Appl. Phys. Lett. doi: 10.1063/1.124707 contributor: fullname: J. Cho – volume: 5 start-page: 8830 year: 2015 ident: 2529_CR10 publication-title: Sci. Rep. doi: 10.1038/srep08830 contributor: fullname: X. He – volume: 2 start-page: 574 year: 2011 ident: 2529_CR22 publication-title: Nat. Commun. doi: 10.1038/ncomms1588 contributor: fullname: J. Zhang – volume: 75 start-page: 235432 year: 2007 ident: 2529_CR21 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.75.235432 contributor: fullname: C. Wagner – ident: 2529_CR25 – volume: 57 start-page: R6858 year: 1998 ident: 2529_CR19 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.57.R6858 contributor: fullname: L. Petersen – volume-title: Modules, Systems, and Applications in Thermoelectrics year: 2012 ident: 2529_CR1 doi: 10.1201/b11892 contributor: fullname: D. M. Rowe – volume: 100 start-page: 442 year: 2014 ident: 2529_CR11 publication-title: JETP Lett. doi: 10.1134/S0021364014180039 contributor: fullname: A. Y. Dmitriev |
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Snippet | The surface states of Dirac fermions in
p
-Bi
2
Te
3
,
p
-Bi
2 –
x
Sb
x
Te
3 –
y
Se
y
, and
p
-Bi
2 –
x
–
y
Sn
x
Ge
y
Te
3
thermoelectrics were studied and its... The surface states of Dirac fermions in p-Bi2Te3, p-Bi2 –xSbxTe3 –ySey, and p-Bi2 –x–ySnxGeyTe3 thermoelectrics were studied and its topological... |
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SubjectTerms | Bismuth tellurides Carrier density Composition Current carriers Fermions Magnetic Materials Magnetism Physics Physics and Astronomy Power factor Thermoelectricity Thermoelectrics and Their Applications Topology Valence band |
Title | Topological Surface States of Multicomponent Thermoelectrics Based on Bismuth Telluride |
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