Characterization of Cr implanted GaAs processed with ArF and Nd-YAG laser melting

• Published in: Semiconductor science and technology Vol. 40; no. 5; pp. 55008 - 55020
• Main Authors: Algaidy, Sari, Caudevilla, Daniel, Benítez-Fernández, Rafael, Duarte-Cano, Sebastián, Pérez-Zenteno, Francisco, García-Hernansanz, Rodrigo, San Andres, Enrique, García-Hemme, Eric, Olea, Javier, Siegel, Jan, Gonzalo, Jose, Pastor, David, Del Prado, Alvaro
• Format: Journal Article
• Language: English
• Published: IOP Publishing 30.05.2025
• Subjects: gallium arsenide; ion implantation; laser processing; supersaturated semiconductors

We present a detailed investigation on the properties of supersaturated GaAs using Cr implantation followed by nanosecond pulsed laser melting (PLM). A comparison between two different lasers was carried out (ArF and Nd:YAG). We have analyzed supersaturated samples by means of structural, electrical...