Internally Integrated Active-Type Patch Antenna for Semiconductor Superlattice THz Oscillators

• Published in: IEEE transactions on terahertz science and technology Vol. 2; no. 1; pp. 131 - 136
• Main Authors: Jagtap, V. S., Minot, C.
• Format: Journal Article
• Language: English
• Published: IEEE 01.01.2012
• Subjects: Active antenna; Bloch oscillator; Cavity resonators; Conductivity; Impedance; microstrip patch; Oscillators; Patch antennas; Resonant frequency; semiconductor superlattice
• DOI: 10.1109/TTHZ.2011.2177169
• ISSN: 2156-342X

Semiconductor superlattices are well known to exhibit negative resistance i.e., gain medium like properties at high frequencies. In order to exploit these gain-like properties as an oscillator, one has to compensate very large inductive impedance (Im[Z] ≥ 150 |Re[Z]|). In this paper, we present a novel integrated active-type patch antenna to design the semiconductor superlattice THz oscillators. Within this integrated model, the active source is embedded within a benzocyclobutene dielectric cavity sandwiched between gold metal layers. The metal layer underneath provides THz/DC ground whereas the top metal functions as a radiating antenna simultaneously providing DC bias to the embedded superlattice active source. The design principle is based on satisfying the self-consistent oscillator impedance relationship, along with the efficient radiation of resonating cavity mode. The two oscillator-type active antenna configurations proposed are capable of matching impedance within few ohms of Im[Z] while achieving an antenna gain of >; 5 dBi for a TM 10 cavity resonating mode.