A perspective on ultrafast magnetization switching in ferromagnets using helicity-independent optical pulses

We offer a brief overview of the present status of ultrafast helicity-independent all-optical magnetization switching (HI-AOS) phenomena in ferromagnet (FM) films and multilayers. The discovery of HI-AOS in ferrimagnet alloys dates back to 2011. From an application standpoint, utilizing HI-AOS in an...

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Published inJournal of physics. D, Applied physics Vol. 58; no. 10; pp. 102001 - 102021
Main Authors Polley, Debanjan, Bokor, Jeffrey
Format Journal Article
LanguageEnglish
Published IOP Publishing 10.03.2025
Subjects
ferromagnets
opto-spintronics
perspective
ultrafast magnetization switching
Online AccessGet full text
ISSN0022-3727
1361-6463
DOI10.1088/1361-6463/ada1e0

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Abstract We offer a brief overview of the present status of ultrafast helicity-independent all-optical magnetization switching (HI-AOS) phenomena in ferromagnet (FM) films and multilayers. The discovery of HI-AOS in ferrimagnet alloys dates back to 2011. From an application standpoint, utilizing HI-AOS in an FM brings about several benefits. One of these advantages is its enhanced spin polarization, which leads to a higher tunneling magneto-resistance (TMR) across a magnetic tunnel junction device. The enhanced TMR greatly enhances its reading capability. Time-resolved and single-shot magneto-optical Kerr effect measurement has successfully enabled the detection of magnetization switching. The magnetization reversal speed stays within the range of tens of picoseconds. There are two methods to achieve HI-AOS in an FM: (1) ultrafast spin-current-induced magnetization switching, and (2) ultrafast exchange interaction-dominated magnetization switching. We conduct a comprehensive analysis of a selection of recent academic publications that delve into both of these subjects and offer a succinct assessment of the present status of the ultrafast HI-AOS phenomenon in FMs. Finally, we discuss the latest developments in tackling the obstacles the HI-AOS mechanism faces and the exciting prospects for developing a high-speed spintronic memory device.
AbstractList We offer a brief overview of the present status of ultrafast helicity-independent all-optical magnetization switching (HI-AOS) phenomena in ferromagnet (FM) films and multilayers. The discovery of HI-AOS in ferrimagnet alloys dates back to 2011. From an application standpoint, utilizing HI-AOS in an FM brings about several benefits. One of these advantages is its enhanced spin polarization, which leads to a higher tunneling magneto-resistance (TMR) across a magnetic tunnel junction device. The enhanced TMR greatly enhances its reading capability. Time-resolved and single-shot magneto-optical Kerr effect measurement has successfully enabled the detection of magnetization switching. The magnetization reversal speed stays within the range of tens of picoseconds. There are two methods to achieve HI-AOS in an FM: (1) ultrafast spin-current-induced magnetization switching, and (2) ultrafast exchange interaction-dominated magnetization switching. We conduct a comprehensive analysis of a selection of recent academic publications that delve into both of these subjects and offer a succinct assessment of the present status of the ultrafast HI-AOS phenomenon in FMs. Finally, we discuss the latest developments in tackling the obstacles the HI-AOS mechanism faces and the exciting prospects for developing a high-speed spintronic memory device.
Author Polley, Debanjan
Bokor, Jeffrey
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  surname: Polley
  fullname: Polley, Debanjan
  organization: BITS-Pilani, Hyderabad Campus Department of Physics, Hyderabad, Telangana 500078, India
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  givenname: Jeffrey
  orcidid: 0000-0002-4541-0156
  surname: Bokor
  fullname: Bokor, Jeffrey
  organization: Lawrence Berkeley National Laboratory , 1 Cyclotron Road, Berkeley, CA 94720, United States of America
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  doi: 10.1038/s41928-020-00488-3
– volume: 5
  start-page: 182
  year: 2019
  ident: dada1e0bib114
  article-title: A novel compound synapse using probabilistic spin–orbit-torque switching for MTJ-based deep neural networks
  publication-title: IEEE J. Explor. Solid-State Comput. Devices Circuits
  doi: 10.1109/JXCDC.2019.2956468
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Snippet We offer a brief overview of the present status of ultrafast helicity-independent all-optical magnetization switching (HI-AOS) phenomena in ferromagnet (FM)...
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iop
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SubjectTerms ferromagnets
opto-spintronics
perspective
ultrafast magnetization switching
Title A perspective on ultrafast magnetization switching in ferromagnets using helicity-independent optical pulses
URI https://iopscience.iop.org/article/10.1088/1361-6463/ada1e0
Volume 58
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