APA (7th ed.) Citation

Lee, J., & Kim, J. (2024). Work-Function Variation and Delay Analysis in NAND and NOR Circuits using Gate Insulator Stack-based Dopingless Tunnel Field-effect Transistors. Journal of semiconductor technology and science, 24(6), 557-564. https://doi.org/10.5573/JSTS.2024.24.6.557

Chicago Style (17th ed.) Citation

Lee, Jongmin, and Jang-Hyun Kim. "Work-Function Variation and Delay Analysis in NAND and NOR Circuits Using Gate Insulator Stack-based Dopingless Tunnel Field-effect Transistors." Journal of Semiconductor Technology and Science 24, no. 6 (2024): 557-564. https://doi.org/10.5573/JSTS.2024.24.6.557.

MLA (9th ed.) Citation

Lee, Jongmin, and Jang-Hyun Kim. "Work-Function Variation and Delay Analysis in NAND and NOR Circuits Using Gate Insulator Stack-based Dopingless Tunnel Field-effect Transistors." Journal of Semiconductor Technology and Science, vol. 24, no. 6, 2024, pp. 557-564, https://doi.org/10.5573/JSTS.2024.24.6.557.