APA (7th ed.) Citation

Ko, M., Kim, J., & Kim, G. (2023). Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations. Journal of semiconductor technology and science, 23(4), 228-235. https://doi.org/10.5573/JSTS.2023.23.4.228

Chicago Style (17th ed.) Citation

Ko, Min-Ki, Jang-Hyun Kim, and Garam Kim. "Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations." Journal of Semiconductor Technology and Science 23, no. 4 (2023): 228-235. https://doi.org/10.5573/JSTS.2023.23.4.228.

MLA (9th ed.) Citation

Ko, Min-Ki, et al. "Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations." Journal of Semiconductor Technology and Science, vol. 23, no. 4, 2023, pp. 228-235, https://doi.org/10.5573/JSTS.2023.23.4.228.