Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC-AC Experimental Conditions

• Published in: IEEE transactions on electron devices Vol. 65; no. 1; pp. 23 - 30
• Main Authors: Parihar, Narendra, Sharma, Uma, Southwick, Richard G., Wang, Miaomiao, Stathis, James H., Mahapatra, Souvik
• Format: Journal Article
• Language: English
• Published: IEEE 01.01.2018
• Subjects: AC stress; Data models; dc stress; high-k metal gate (HKMG); hole trapping; interface and bulk trap generation; Kinetic theory; Logic gates; Negative bias temperature instability; negative-bias temperature instability (NBTI); reaction–diffusion (RD) model; recovery after stress; replacement metal gate (RMG) FinFETs; Stress; Stress measurement; Thermal variables control

Threshold voltage shift (<inline-formula> <tex-math notation="LaTeX">\Delta {\text V}_{\text T} </tex-math></inline-formula>) due to negative-bias temperature instability (NBTI) in p-FinFETs with replacement metal gate-based high-k metal gate process is measured usi...