A Read Disturbance Tolerant Phase Change Memory System for CNN Inference Workloads

• Published in: Journal of semiconductor technology and science Vol. 22; no. 4; pp. 216 - 223
• Main Authors: Lee, Hyokeun, Lee, Hyuk-Jae, Kim, Hyun
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.08.2022
• Subjects: 전기공학; CNN inference; non-volatile memory; read disturbance error; Phase-change memory; reliability

Phase-change memory (PCM) garners attention as the most promising nonvolatile memory (NVM). In particular, PCM is suitable for applications that are not memory intensive, and the convolutional neural network (CNN) inference is widely known as a representative computation- intensive model. Therefore,...