APA (7th ed.) Citation

Lee, H., Lee, H., & Kim, H. (2022). A Read Disturbance Tolerant Phase Change Memory System for CNN Inference Workloads. Journal of semiconductor technology and science, 22(4), 216-223. https://doi.org/10.5573/JSTS.2022.22.4.216

Chicago Style (17th ed.) Citation

Lee, Hyokeun, Hyuk-Jae Lee, and Hyun Kim. "A Read Disturbance Tolerant Phase Change Memory System for CNN Inference Workloads." Journal of Semiconductor Technology and Science 22, no. 4 (2022): 216-223. https://doi.org/10.5573/JSTS.2022.22.4.216.

MLA (9th ed.) Citation

Lee, Hyokeun, et al. "A Read Disturbance Tolerant Phase Change Memory System for CNN Inference Workloads." Journal of Semiconductor Technology and Science, vol. 22, no. 4, 2022, pp. 216-223, https://doi.org/10.5573/JSTS.2022.22.4.216.