Numerical Simulation of N+ Source Pocket PIN-GAA-Tunnel FET: Impact of Interface Trap Charges and Temperature
This paper investigates the reliability of PINgate-all-around (GAA)-tunnel field-effect transistor (TFET) with N± source pocket. The reliability of the PNIN-GAA-TFET is examined by analyzing: 1) the impact of interface trap charge (ITC) density and polarity and 2) the temperature affect ability on a...
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Published in | IEEE transactions on electron devices Vol. 64; no. 4; pp. 1482 - 1488 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.04.2017
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Subjects | |
Online Access | Get full text |
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