Twin Thin-Film Transistor Nonvolatile Memory With an Indium-Gallium-Zinc-Oxide Floating Gate

A polycrystalline silicon (poly-Si) channel twin thin-film transistor (twin-TFT) nonvolatile memory (NVM) device with In-Ga-Zn-O x (IGZO) as a storage layer is demonstrated. IGZO-FG twin-TFT NVM exhibits a large memory window Δ V th . A V CG at 18 V for 10 ms can achieve 5.6 V of Δ V th . An extrapo...

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Bibliographic Details
Published inIEEE electron device letters Vol. 34; no. 1; pp. 75 - 77
Main Authors Hung, Min-Feng, Wu, Yung-Chun, Chang, Jiun-Jye, Chang-Liao, Kuei-Shu
Format Journal Article
LanguageEnglish
Published IEEE 01.01.2013
Subjects
Fabrication
Indium-gallium-zinc-oxide (IGZO)
Junctions
Logic gates
Nonvolatile memory
nonvolatile memory (NVM)
planar
Thin film transistors
Tunneling
twin thin-film transistor (twin-TFT)
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Summary:A polycrystalline silicon (poly-Si) channel twin thin-film transistor (twin-TFT) nonvolatile memory (NVM) device with In-Ga-Zn-O x (IGZO) as a storage layer is demonstrated. IGZO-FG twin-TFT NVM exhibits a large memory window Δ V th . A V CG at 18 V for 10 ms can achieve 5.6 V of Δ V th . An extrapolation of the memory window to ten years demonstrates that the stored charge still remains 65% of its initial value. Coupling ratio effect and gate length effect are discussed in detail. Such a low-temperature IGZO-FG twin-TFT NVM device is feasible for integration in IGZO-based display circuits for system-on-panel applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2226232