Field effect transistor with thin AlOxNy film as gate dielectric

• Published in: Microelectronics international Vol. 37; no. 2; pp. 103 - 107
• Main Authors: Firek, Piotr, Szarafiński, Jakub, Głuszko, Grzegorz, Szmidt, Jan
• Format: Journal Article
• Language: English
• Published: Bradford Emerald Publishing Limited 21.05.2020; Emerald Group Publishing Limited
• Subjects: Aluminum; Buffer layers; Charge transfer; Density; Dielectrics; Electrical measurement; Etching; Field effect transistors; High temperature; Interfaces; Magnetic properties; Magnetron sputtering; MIS (semiconductors); Optical pumping; Oxidation; Palladium; Parameters; Plasma etching; Semiconductor devices; Silicon dioxide; Silicon wafers; Stoichiometry; Thick films; Threshold voltage; Transistors; Electronic properties; I-V characterization; Dielectric thin films; Charge pumping; Aluminum oxynitride; MISFET; Semiconductor technology

Purpose The purpose of this study is to directly measure and determine the Si/SiO2/AlOxNy interface state density on metal insulator semiconductor field effect transistor (MISFET) structures. The primary advantage of using aluminum oxynitride (AlOxNy) is the perfectly controlled variability of the p...