Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si - Kang, Ga-Eon; Kang, In-Man; Lee, Sang-Ho; Park, Jin; Min, So-Ra; Kim, Geon-Uk; Heo, Jun-Hyeok; Jang, Jaewon; Bae, Jin-Hyuk; Lee, Sin-Hyung (Journal of semiconductor technology and science, 2023)
Keywords: 전기공학; polycrystalline silicon (Poly-Si); Multiple nanosheet tunneling field-effect transistor (MNSTFET); grain boundary (GB)