APA (7th ed.) Citation

Kang, G., Kang, I., Lee, S., Park, J., Min, S., Kim, G., . . . Lee, S. (2023). Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si. Journal of semiconductor technology and science, 23(1), 8-16. https://doi.org/10.5573/JSTS.2023.23.1.8

Chicago Style (17th ed.) Citation

Kang, Ga-Eon, et al. "Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor Based on the Poly-Si." Journal of Semiconductor Technology and Science 23, no. 1 (2023): 8-16. https://doi.org/10.5573/JSTS.2023.23.1.8.

MLA (9th ed.) Citation

Kang, Ga-Eon, et al. "Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor Based on the Poly-Si." Journal of Semiconductor Technology and Science, vol. 23, no. 1, 2023, pp. 8-16, https://doi.org/10.5573/JSTS.2023.23.1.8.