Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors - 赵彦晓 张万荣 黄鑫 谢红云 金冬月 付强 (Chinese physics B, 2016)
Keywords: Artificial intelligence; BiCMOS工艺; Emitters; HBT; Inductance; Inductors; Quality factor; Semiconductor devices; SiGe; Silicon germanides; Transistors; 合成; 操作条件; 有源电感; 结构参数; 自谐振频率