付强, 赵. 张. 黄. 谢. 金. (2016). Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors. Chinese physics B, 25(3), 434-439. https://doi.org/10.1088/1674-1056/25/3/038501
Chicago Style (17th ed.) Citation付强, 赵彦晓 张万荣 黄鑫 谢红云 金冬月. "Effect of Lateral Structure Parameters of SiGe HBTs on Synthesized Active Inductors." Chinese Physics B 25, no. 3 (2016): 434-439. https://doi.org/10.1088/1674-1056/25/3/038501.
MLA (9th ed.) Citation付强, 赵彦晓 张万荣 黄鑫 谢红云 金冬月. "Effect of Lateral Structure Parameters of SiGe HBTs on Synthesized Active Inductors." Chinese Physics B, vol. 25, no. 3, 2016, pp. 434-439, https://doi.org/10.1088/1674-1056/25/3/038501.
Warning: These citations may not always be 100% accurate.