Effect of Cu-doping on II-VI semiconducting ZnO

Effects of monovalent Cu + and divalent Cu 2+ dopants on electronic propeties of II-VI semiconductor ZnO were studied. The electronic nature is greatly affected by Cu-dopants and heat treatment of samples. The carrier is n-type; the carrier density, 2.2 × 10 14 cm −3 at 450K, and the resistivity, 1....

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Published inFerroelectrics Vol. 264; no. 1; pp. 139 - 144
Main Authors Satoh, H., Kudoh, K., Yoshio, K., Yamazaki, T., Matsuki, K., Shimono, I., Sakagami, N., Onodera, A.
Format Journal Article
LanguageEnglish
Published Taylor & Francis Group 01.01.2001
Subjects
ceramic
copper-doping
resistivity
zinc oxide
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Summary:Effects of monovalent Cu + and divalent Cu 2+ dopants on electronic propeties of II-VI semiconductor ZnO were studied. The electronic nature is greatly affected by Cu-dopants and heat treatment of samples. The carrier is n-type; the carrier density, 2.2 × 10 14 cm −3 at 450K, and the resistivity, 1.5 × 10 9 ω-cm at room temperature in 2 mole% Cu-doped ceramics. No evidence of ferroelectric behavior was found in the temperature range from room temperature to 500 K.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150190108008560