Monolithic germanium silicon avalanche photodiodes with 340 GHz gain-bandwidth product
Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases...
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Published in | Nature photonics Vol. 3; no. 1; pp. 59 - 63 |
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Main Authors | , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group
01.01.2009
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Subjects | |
Online Access | Get full text |
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Abstract | Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon's material properties allow for high gain with less excess noise than InP-based avalanche photodetectors and a theoretical sensitivity improvement of 3 dB or more. Here, we report a monolithically grown germanium/silicon avalanche photodetector with a gain-bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of -28 dB m at 10 Gb s-1. This is the highest reported gain-bandwidth product for any avalanche photodetector operating at 1,300 nm and a sensitivity that is equivalent to mature, commercially available III-V compound avalanche photodetectors. This work paves the way for the future development of low-cost, CMOS-based germanium/silicon avalanche photodetectors operating at data rates of 40 Gb s-1 or higher. |
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AbstractList | Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon's material properties allow for high gain with less excess noise than InP-based avalanche photodetectors and a theoretical sensitivity improvement of 3 dB or more. Here, we report a monolithically grown germanium/silicon avalanche photodetector with a gain-bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of -28 dB m at 10 Gb s-1. This is the highest reported gain-bandwidth product for any avalanche photodetector operating at 1,300 nm and a sensitivity that is equivalent to mature, commercially available III-V compound avalanche photodetectors. This work paves the way for the future development of low-cost, CMOS-based germanium/silicon avalanche photodetectors operating at data rates of 40 Gb s-1 or higher. |
Author | Chen, Hui-Wen Zaoui, Wissem Sfar Sarid, Gadi Kang, Yimin Paniccia, Mario J Liu, Han-Din Bowers, John E Zadka, Moshe Zheng, Xiaoguang Pauchard, Alexandre Morse, Mike Litski, Stas Campbell, Joe C Kuo, Ying-Hao McIntosh, Dion C Beling, Andreas |
Author_xml | – sequence: 1 givenname: Yimin surname: Kang fullname: Kang, Yimin organization: Intel Corporation – sequence: 2 givenname: Han-Din surname: Liu fullname: Liu, Han-Din organization: Intel Corporation University of Virginia, ECE Department – sequence: 3 givenname: Mike surname: Morse fullname: Morse, Mike organization: Intel Corporation – sequence: 4 givenname: Mario J surname: Paniccia fullname: Paniccia, Mario J organization: Intel Corporation – sequence: 5 givenname: Moshe surname: Zadka fullname: Zadka, Moshe organization: Numonyx – sequence: 6 givenname: Stas surname: Litski fullname: Litski, Stas organization: Numonyx – sequence: 7 givenname: Gadi surname: Sarid fullname: Sarid, Gadi organization: Numonyx – sequence: 8 givenname: Alexandre surname: Pauchard fullname: Pauchard, Alexandre – sequence: 9 givenname: Ying-Hao surname: Kuo fullname: Kuo, Ying-Hao organization: University of California Santa Barbara, ECE Department – sequence: 10 givenname: Hui-Wen surname: Chen fullname: Chen, Hui-Wen organization: University of California Santa Barbara, ECE Department – sequence: 11 givenname: Wissem Sfar surname: Zaoui fullname: Zaoui, Wissem Sfar organization: University of California Santa Barbara, ECE Department – sequence: 12 givenname: John E surname: Bowers fullname: Bowers, John E organization: University of California Santa Barbara, ECE Department – sequence: 13 givenname: Andreas surname: Beling fullname: Beling, Andreas organization: University of Virginia, ECE Department – sequence: 14 givenname: Dion C surname: McIntosh fullname: McIntosh, Dion C organization: University of Virginia, ECE Department – sequence: 15 givenname: Xiaoguang surname: Zheng fullname: Zheng, Xiaoguang organization: University of Virginia, ECE Department – sequence: 16 givenname: Joe C surname: Campbell fullname: Campbell, Joe C organization: University of Virginia, ECE Department |
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Keywords | Integrated optics Binary compound Excess noise Indium Phosphides Optical modulator Avalanche photodiodes Germanium Silicon Photodetector III-V compound III-V semiconductors Photonics |
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Snippet | Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and... |
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SubjectTerms | Applied sciences Bandwidths Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Optical elements, devices, and systems Optical processors, correlators, and modulators Optics Optoelectronic devices Photonics Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors Silicon |
Title | Monolithic germanium silicon avalanche photodiodes with 340 GHz gain-bandwidth product |
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