Simulation of memristors in presence of high-frequency forcing function
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Published in | Electronics letters Vol. 48; no. 12; pp. 684 - 686 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Stevenage
Institution of Engineering and Technology
07.06.2012
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Subjects | |
Online Access | Get full text |
ISSN | 0013-5194 1350-911X |
DOI | 10.1049/el.2012.1051 |
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Author | Deaño, A. Iserles, A. Condon, M. |
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Author_xml | – sequence: 1 givenname: M. surname: Condon fullname: Condon, M. organization: School of Electronic Engineering and The Rince Institute, Dublin City University, Dublin, 9, Ireland – sequence: 2 givenname: A. surname: Deaño fullname: Deaño, A. organization: Department of Mathematics, University Carlos III de Madrid, Avda. Universidad, 30 Leganés, Madrid, 28911, Spain – sequence: 3 givenname: A. surname: Iserles fullname: Iserles, A. organization: Department of Applied Mathematics and Theoretical Physics, Centre for Mathematical Sciences, University of Cambridge, Wilberforce Road, Cambridge, CB3 0WA, United Kingdom |
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Keywords | Performance evaluation Memory devices Memristor Asymptotic approximation High frequency |
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SubjectTerms | Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Magnetic and optical mass memories Storage and reproduction of information |
Title | Simulation of memristors in presence of high-frequency forcing function |
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