A novel NLDMOS with a high ballast resistance for ESD protection

To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electron injection can makes the Kirk effect more serious and lead easily to the non-unif...

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Published inJournal of semiconductors Vol. 35; no. 2; pp. 47 - 50
Main Author 樊航 张波
Format Journal Article
LanguageEnglish
Published 01.02.2014
Subjects
Ballast
Drains
Electric potential
Electrostatic discharges
ESD保护
Injection current
MOS结构
Oxides
Semiconductors
Splitting
传导
故障电流
注入电流
电子注入
镇流电阻
非均匀
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/35/2/024005

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Abstract To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electron injection can makes the Kirk effect more serious and lead easily to the non-uniform conduction phenomenon. By splitting the drain N＋ with the field oxide in the proposed structure, the crowded current can lead to a higher voltage drop on the ballast resistance. Therefore, the non-uniform conduction is suppressed, and its failure current is much improved.
AbstractList To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electron injection can makes the Kirk effect more serious and lead easily to the non-uniform conduction phenomenon. By splitting the drain N＋ with the field oxide in the proposed structure, the crowded current can lead to a higher voltage drop on the ballast resistance. Therefore, the non-uniform conduction is suppressed, and its failure current is much improved.
To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electron injection can makes the Kirk effect more serious and lead easily to the non-uniform conduction phenomenon. By splitting the drain N+ with the field oxide in the proposed structure, the crowded current can lead to a higher voltage drop on the ballast resistance. Therefore, the non-uniform conduction is suppressed, and its failure current is much improved.
Author 樊航 张波
AuthorAffiliation State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technologyof China, Chengdu 610054, China
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Cites_doi 10.1109/TEMC.2008.2004582
10.1109/TED.2009.2022698
10.1109/TDMR.2012.2220358
10.1109/TED.2009.2031003
10.1002/0470013508
10.1016/S0038-1101(00)00122-2
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Notes electro-static discharge; ballast resistance; LDMOS
11-5781/TN
To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electron injection can makes the Kirk effect more serious and lead easily to the non-uniform conduction phenomenon. By splitting the drain N＋ with the field oxide in the proposed structure, the crowded current can lead to a higher voltage drop on the ballast resistance. Therefore, the non-uniform conduction is suppressed, and its failure current is much improved.
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SubjectTerms Ballast
Drains
Electric potential
Electrostatic discharges
ESD保护
Injection current
MOS结构
Oxides
Semiconductors
Splitting
传导
故障电流
注入电流
电子注入
镇流电阻
非均匀
Title A novel NLDMOS with a high ballast resistance for ESD protection
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