Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench - 王沛 罗小蓉 蒋永恒 王琦 周坤 吴丽娟 王骁玮 蔡金勇 罗尹春 范叶 胡夏融 范远航 魏杰 张波 (Chinese physics B, 2013)
Keywords: Dielectrics; Electric potential; Gates; Metal oxide semiconductors; Metal oxides; Semiconductors; Trenches; VDMOS器件; Voltage; 低导通电阻; 双扩散; 垂直; 填充; 扩展槽; 金属氧化物半导体; 高k电介质