Si3O cluster: excited properties under external electric field and oxygen-deficient defect models

This paper investigates the excited states of Si3O molecule by using the single-excitation configuration interaction and density functional theory. It finds that the visible light absorption spectrum of Si3O molecule comprises the yellow and the purple light without external electric field, however...

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Published inChinese physics B Vol. 20; no. 1; pp. 291 - 295
Main Author 徐国亮 刘雪峰 谢会香 张现周 刘玉芳
Format Journal Article
LanguageEnglish
Published IOP Publishing 2011
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/1/013101

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Abstract This paper investigates the excited states of Si3O molecule by using the single-excitation configuration interaction and density functional theory. It finds that the visible light absorption spectrum of Si3O molecule comprises the yellow and the purple light without external electric field, however all the visible light is included except the green light under the action of external electric field. Oxygen-deficient defects, which also can be found in Si3O molecule, have been used to explain the 1 from silicon-based materials but the microstructures of the materials are still uncertain Our results accord with the experimental values perfectly, this fact suggests that the structure of Si3O molecule is expected to be one of the main basic structures of the materials, so the oxygen-deficient defect structural model for Si3O molecule also has been provided to research the structures of materials.
AbstractList This paper investigates the excited states of Si3O molecule by using the single-excitation configuration interaction and density functional theory. It finds that the visible light absorption spectrum of Si3O molecule comprises the yellow and the purple light without external electric field, however all the visible light is included except the green light under the action of external electric field. Oxygen-deficient defects, which also can be found in Si3O molecule, have been used to explain the 1 from silicon-based materials but the microstructures of the materials are still uncertain Our results accord with the experimental values perfectly, this fact suggests that the structure of Si3O molecule is expected to be one of the main basic structures of the materials, so the oxygen-deficient defect structural model for Si3O molecule also has been provided to research the structures of materials.
Author 徐国亮 刘雪峰 谢会香 张现周 刘玉芳
AuthorAffiliation College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, China
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Snippet This paper investigates the excited states of Si3O molecule by using the single-excitation configuration interaction and density functional theory. It finds...
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StartPage 291
SubjectTerms 兴奋性
分子激发态
分子结构模型
单激发组态相互作用
电场作用
Title Si3O cluster: excited properties under external electric field and oxygen-deficient defect models
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