High temperature reliability and performance evaluation of 1200 V SiC MOSFETs

• Published in: Journal of crystal growth Vol. 606; p. 127086
• Main Authors: Wang, Guibao, Yuan, Lei, Wang, Xiaowen, Zhang, Yuming, Jia, Renxu
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.03.2023
• Subjects: A1. High temperature gate bias; A1. High temperature reverse bias; A1. Interface traps; A1. Reliability; A1. Threshold voltage; B3. SiC MOSFET; A1. Reliability; A1. Threshold voltage; A1. High temperature gate bias; A1. Interface traps; B3. SiC MOSFET; A1. High temperature reverse bias
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2023.127086

•SiC MOSFETs static characteristic parameters are affected by temperature variation.•The HTGB project will affect the threshold voltage of the device.•The HTRB project will affect the Idss and threshold voltage of the device. Reliability characteristics play a critical role in studied of SiC MOSFETs, including gate oxygen, long-term and short circuit reliability. This article presents a long-term reliability and device high temperature performance. Firstly, the static performance evaluation of the device at high temperature is introduced. Next, the gate bias test induces the threshold voltage shift, arguing that the instability is due to the capture of electrons by the SiC/SiO2 interface traps and the gate dielectric near-interface traps. Finally, the reliability characterization is verified using the common methods of high temperature reverse bias and high temperature gate bias tests. The results exhibit the superior reliability and performance of 1200 V SiC MOSFETs.