Experimental Verification of the Switching Loss Reduction Effect and Characteristic Fluctuation of SiC MOSFETs Dependent on Gate Drive Voltage

• Published in: Electrical engineering in Japan Vol. 218; no. 2
• Main Authors: Sagae, Takahide, Hayashi, Shin‐Ichiro, Wada, Keiji
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 01.06.2025
• Subjects: Electric potential; Energy conversion; gate voltage; long‐term reliability; Loss reduction; Metal oxide semiconductors; MOSFETs; SiC MOSFET; Silicon carbide; switching loss; Voltage

ABSTRACT The switching frequency of silicon carbide (SiC) metal–oxide–semiconductor field‐effect transistors (MOSFETs) should be increased to maximize their benefits in power conversion circuits. However, the switching loss increases when the switching frequency is increased. Generally, the gate res...