Experimental Verification of the Switching Loss Reduction Effect and Characteristic Fluctuation of SiC MOSFETs Dependent on Gate Drive Voltage - Sagae, Takahide; Hayashi, Shin‐Ichiro; Wada, Keiji (Electrical engineering in Japan, 2025)
Keywords: Electric potential; Energy conversion; gate voltage; long‐term reliability; Loss reduction; Metal oxide semiconductors; MOSFETs; SiC MOSFET; Silicon carbide; switching loss; Voltage