Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing - Pavelescu, E.-M.; Gheorghiu, A.; Dumitrescu, M.; Tukiainen, A.; Jouhti, T.; Hakkarainen, T.; Kudrawiec, R.; Andrzejewski, J.; Misiewicz, J.; Tkachenko, N.; Dhaka, V. D. S.; Lemmetyinen, H.; et al. (Applied physics letters, 2004)
Keywords: ANNEALING; ELECTRON BEAMS; FLUCTUATIONS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM NITRIDES; IRRADIATION; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POTENTIAL ENERGY; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; X-RAY DIFFRACTION