Uniaxial and biaxial strain engineering in 2D MoS2 with lithographically patterned thin film stressors

• Published in: Applied physics letters Vol. 118; no. 21
• Main Authors: Azizimanesh, Ahmad, Peña, Tara, Sewaket, Arfan, Hou, Wenhui, Wu, Stephen M.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 24.05.2021
• Subjects: Applied physics; Axial stress; Bonding strength; Carrier mobility; CMOS; Compressive properties; Electron beams; Flakes; Material properties; Molybdenum disulfide; MOSFETs; Optical properties; Raman spectroscopy; Stability; Strain distribution; Strip; Thin films; Two dimensional materials

We introduce a controllable approach to selectively strain (uniaxially or biaxially) MoS2 by depositing e-beam evaporated thin film stressors with a lithographically patterned stripe geometry. This type of strain engineering has been highly successful in commercial silicon-based CMOS processes to en...