Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer - Zheng, Zhi-Wei (志威 郑); Huo, Zong-Liang (宗亮 霍); Zhu, Chen-Xin (晨昕 朱); Xu, Zhong-Guang (中广 许); Liu, Jing (璟刘); Liu, Ming (明刘) (Chinese physics B, 2011)
Keywords: Aluminum oxide; Capacitors; Data storage; Energy bands; Hafnium oxide; Memory devices; Stacks; Trapping; 堆栈; 捕获; 氧化物; 电荷; 能带工程; 闪存设备; 阻挡层; 非易失性