Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfS...

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Bibliographic Details
Published inChinese physics B Vol. 20; no. 10; pp. 476 - 479
Main Authors Zheng, Zhi-Wei (志威 郑), Huo, Zong-Liang (宗亮 霍), Zhu, Chen-Xin (晨昕 朱), Xu, Zhong-Guang (中广 许), Liu, Jing (璟刘), Liu, Ming (明刘)
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.10.2011
Subjects
Aluminum oxide
Capacitors
Data storage
Energy bands
Hafnium oxide
Memory devices
Stacks
Trapping
堆栈
捕获
氧化物
电荷
能带工程
闪存设备
阻挡层
非易失性
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/10/108501

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Summary:In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.
Bibliography:In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.
11-5639/O4
charge trapping flash, blocking layer, stack
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/10/108501