Influence of Junction-Capacitance and Dead-Time on Dual-Active-Bridge Actual Soft-Switching-Range: Analytic Analysis and Solution

Dual active bridges (DABs) may lose zero voltage switching (ZVS) operation when the junction capacitance of semiconductors cannot be fully charged or discharged within dead time. The influence above is more serious especially under light load because the switching current is small. The aim of this a...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on power electronics Vol. 38; no. 5; pp. 6157 - 6168
Main Authors Wang, Zhe, Li, Chi, Liu, Jiye, Zheng, Zedong
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Capacitance
Capacitance bridges
Dead time
dual active bridge (DAB)
Electric bridges
Electric converters
Inductors
junction capacitance
Junctions
Modulation
Phase modulation
soft switching
Switches
Switching
Voltage
Zero voltage switching
Online AccessGet full text

Cover

Abstract Dual active bridges (DABs) may lose zero voltage switching (ZVS) operation when the junction capacitance of semiconductors cannot be fully charged or discharged within dead time. The influence above is more serious especially under light load because the switching current is small. The aim of this article is to analyze the influence of the junction capacitance and dead time on the ZVS range of DAB and propose a novel modulation to eliminate the influence. It is concluded that DAB has an inherent non-ZVS region due to the influence of junction capacitance and dead time. Besides, the exact ZVS range of DAB is given when the junction capacitance and dead time are considered. In view of the influence of junction capacitance and dead time, this article proposed a mixed-mode modulation, which enables DAB to avoid operating in non-ZVS region. Finally, a 4.5 kW rated prototype is made and experimental results are presented to verify the previous conclusions. The efficiency with the proposed method can be up to 4% higher under light load than that with the traditional method ignoring nonideal factors.
AbstractList Dual active bridges (DABs) may lose zero voltage switching (ZVS) operation when the junction capacitance of semiconductors cannot be fully charged or discharged within dead time. The influence above is more serious especially under light load because the switching current is small. The aim of this article is to analyze the influence of the junction capacitance and dead time on the ZVS range of DAB and propose a novel modulation to eliminate the influence. It is concluded that DAB has an inherent non-ZVS region due to the influence of junction capacitance and dead time. Besides, the exact ZVS range of DAB is given when the junction capacitance and dead time are considered. In view of the influence of junction capacitance and dead time, this article proposed a mixed-mode modulation, which enables DAB to avoid operating in non-ZVS region. Finally, a 4.5 kW rated prototype is made and experimental results are presented to verify the previous conclusions. The efficiency with the proposed method can be up to 4% higher under light load than that with the traditional method ignoring nonideal factors.
Author Wang, Zhe
Li, Chi
Zheng, Zedong
Liu, Jiye
Author_xml – sequence: 1
  givenname: Zhe
  orcidid: 0000-0003-0527-8792
  surname: Wang
  fullname: Wang, Zhe
  email: wangzhe19@mails.tsinghua.edu.cn
  organization: State Key Laboratory of Control and Simulation of Power Systems and Generation Equipments, Department of Electrical Engineering, Tsinghua University, Beijing, China
– sequence: 2
  givenname: Chi
  orcidid: 0000-0001-7873-3173
  surname: Li
  fullname: Li, Chi
  email: chi.li.2014@ieee.org
  organization: State Key Laboratory of Control and Simulation of Power Systems and Generation Equipments, Department of Electrical Engineering, Tsinghua University, Beijing, China
– sequence: 3
  givenname: Jiye
  orcidid: 0000-0002-3001-7781
  surname: Liu
  fullname: Liu, Jiye
  email: liujiye13@126.com
  organization: Beijing Relpow Technology Co., Ltd, Beijing, China
– sequence: 4
  givenname: Zedong
  orcidid: 0000-0003-4392-3502
  surname: Zheng
  fullname: Zheng, Zedong
  email: zzd@tsinghua.edu.cn
  organization: State Key Laboratory of Control and Simulation of Power Systems and Generation Equipments, Department of Electrical Engineering, Tsinghua University, Beijing, China
BookMark eNo9kF1PwjAUhhujiYD-AOPNEq-L_drWeoeAiiHRCF4vpWuxZLS4bhou_ed2Qrw657x5ztfbB6fOOw3AFUZDjJG4Xb5O50OCCBlSQjil_AT0sGAYIozyU9BDnKeQC0HPQT-EDUKYpQj3wM_MmarVTunEm-S5daqx3sGx3EllG9np0pXJRMsSLu02Ui6ZtLKCowh-aXhf23Ktk1hFMVl408DFt23Uh3Vr-CbdWt8lIyerfWPVIQk2_I1c-Krtdl2AMyOroC-PcQDeH6bL8ROcvzzOxqM5VCTNGshKZHBKcrrCJBV5rgXFKyNzshKEKyoRZ6wkIlOxim8ixKRUHGlNjCGS5XQAbg5zd7X_bHVoio1v63hRKEjOM5EzxjsKHyhV-xBqbYpdbbey3hcYFZ3TRed00TldHJ2OPdeHHqu1_ueF4CnLEP0F_yR7sA
CODEN ITPEE8
CitedBy_id crossref_primary_10_1109_TPEL_2023_3272487
crossref_primary_10_1080_15567036_2024_2319347
crossref_primary_10_1109_TPEL_2023_3260682
crossref_primary_10_1109_OJPEL_2023_3319488
crossref_primary_10_1109_TPEL_2023_3258418
crossref_primary_10_1109_JESTPE_2024_3373594
Cites_doi 10.1109/TPEL.2013.2289913
10.1109/TIE.2012.2210374
10.1109/JESTPE.2020.2983870
10.1109/TPEL.2019.2927930
10.1109/TPEL.2015.2445831
10.1109/28.67533
10.1109/TIE.2019.2947809
10.1109/TPEL.2014.2309853
10.1109/TIE.2018.2815993
10.1109/ECCE.2013.6647349
10.1109/EPE.2016.7695464
10.1109/TIE.2017.2686307
10.1109/TPEL.2020.3011470
10.1109/TPEL.2016.2633507
10.1109/TPEL.2019.2955896
10.1109/TPEL.2012.2216549
10.1109/IECON49645.2022.9968411
10.1109/TIE.2016.2543182
10.1109/TPEL.2013.2271511
10.1109/TIA.2014.2331426
10.1109/TPEL.2011.2157976
10.1109/TII.2017.2707106
10.1109/TPEL.2017.2769638
10.1109/TPEL.2020.3003248
10.1109/TIE.2014.2316229
10.1109/TPEL.2016.2602285
10.1109/TPEL.2011.2180928
10.1109/TPEL.2017.2692276
10.1109/ACCESS.2020.2983090
10.1109/TPEL.2018.2890292
10.1109/TIE.2013.2258304
10.1109/TPEL.2019.2897007
10.1109/TPEL.2020.2975256
10.1109/TIE.2012.2205356
10.1109/TPEL.2015.2413815
10.1109/TPEL.2013.2256149
ContentType Journal Article
Copyright Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023
Copyright_xml – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023
DBID 97E
RIA
RIE
AAYXX
CITATION
7SP
7TB
8FD
FR3
JQ2
KR7
L7M
DOI 10.1109/TPEL.2022.3228338
DatabaseName IEEE All-Society Periodicals Package (ASPP) 2005-present
IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE Electronic Library Online
CrossRef
Electronics & Communications Abstracts
Mechanical & Transportation Engineering Abstracts
Technology Research Database
Engineering Research Database
ProQuest Computer Science Collection
Civil Engineering Abstracts
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Civil Engineering Abstracts
Technology Research Database
Mechanical & Transportation Engineering Abstracts
Electronics & Communications Abstracts
ProQuest Computer Science Collection
Engineering Research Database
Advanced Technologies Database with Aerospace
DatabaseTitleList
Civil Engineering Abstracts
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library Online
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1941-0107
EndPage 6168
ExternalDocumentID 10_1109_TPEL_2022_3228338
9985460
Genre orig-research
GrantInformation_xml – fundername: Science and Technology Project of State Grid Corporation of China
  grantid: SGSNKY00KJJS2100291
GroupedDBID -~X
0R~
29I
3EH
4.4
5GY
5VS
6IK
97E
AAJGR
AASAJ
ABFSI
ABQJQ
ACGFO
ACGFS
ACIWK
ACKIV
AENEX
AETIX
AI.
AIBXA
AKJIK
ALLEH
ALMA_UNASSIGNED_HOLDINGS
ASUFR
ATWAV
BEFXN
BFFAM
BGNUA
BKEBE
BKOMP
BPEOZ
CS3
DU5
E.L
EBS
EJD
HZ~
H~9
ICLAB
IFIPE
IFJZH
IPLJI
JAVBF
LAI
M43
MS~
O9-
OCL
P2P
PQQKQ
RIA
RIE
RIG
RNS
RXW
TAE
TAF
TN5
VH1
VJK
AAYXX
CITATION
7SP
7TB
8FD
FR3
JQ2
KR7
L7M
ID FETCH-LOGICAL-c256t-4d0f15273b125977e931bfa72b928c3a0844d296c28c993004aac80ee2ff2a473
IEDL.DBID RIE
ISSN 0885-8993
IngestDate Thu Oct 10 16:26:03 EDT 2024
Fri Aug 23 03:11:20 EDT 2024
Mon Nov 04 12:05:48 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 5
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c256t-4d0f15273b125977e931bfa72b928c3a0844d296c28c993004aac80ee2ff2a473
ORCID 0000-0003-4392-3502
0000-0003-0527-8792
0000-0001-7873-3173
0000-0002-3001-7781
PQID 2786974487
PQPubID 37080
PageCount 12
ParticipantIDs crossref_primary_10_1109_TPEL_2022_3228338
proquest_journals_2786974487
ieee_primary_9985460
PublicationCentury 2000
PublicationDate 2023-05-01
PublicationDateYYYYMMDD 2023-05-01
PublicationDate_xml – month: 05
  year: 2023
  text: 2023-05-01
  day: 01
PublicationDecade 2020
PublicationPlace New York
PublicationPlace_xml – name: New York
PublicationTitle IEEE transactions on power electronics
PublicationTitleAbbrev TPEL
PublicationYear 2023
Publisher IEEE
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml – name: IEEE
– name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
References ref13
ref35
ref12
ref34
ref15
ref14
ref36
ref31
ref30
ref11
ref33
ref10
ref32
ref2
ref1
ref17
ref16
ref19
ref18
ref24
ref23
ref26
ref25
ref20
ref22
ref21
ref28
ref27
ref29
ref8
ref7
ref9
ref4
ref3
ref6
ref5
References_xml – ident: ref12
  doi: 10.1109/TPEL.2013.2289913
– ident: ref14
  doi: 10.1109/TIE.2012.2210374
– ident: ref36
  doi: 10.1109/JESTPE.2020.2983870
– ident: ref11
  doi: 10.1109/TPEL.2019.2927930
– ident: ref33
  doi: 10.1109/TPEL.2015.2445831
– ident: ref1
  doi: 10.1109/28.67533
– ident: ref35
  doi: 10.1109/TIE.2019.2947809
– ident: ref22
  doi: 10.1109/TPEL.2014.2309853
– ident: ref28
  doi: 10.1109/TIE.2018.2815993
– ident: ref23
  doi: 10.1109/ECCE.2013.6647349
– ident: ref29
  doi: 10.1109/EPE.2016.7695464
– ident: ref2
  doi: 10.1109/TIE.2017.2686307
– ident: ref25
  doi: 10.1109/TPEL.2020.3011470
– ident: ref30
  doi: 10.1109/TPEL.2016.2633507
– ident: ref26
  doi: 10.1109/TPEL.2019.2955896
– ident: ref6
  doi: 10.1109/TPEL.2012.2216549
– ident: ref32
  doi: 10.1109/IECON49645.2022.9968411
– ident: ref19
  doi: 10.1109/TIE.2016.2543182
– ident: ref20
  doi: 10.1109/TPEL.2013.2271511
– ident: ref21
  doi: 10.1109/TIA.2014.2331426
– ident: ref17
  doi: 10.1109/TPEL.2011.2157976
– ident: ref3
  doi: 10.1109/TII.2017.2707106
– ident: ref5
  doi: 10.1109/TPEL.2017.2769638
– ident: ref24
  doi: 10.1109/TPEL.2020.3003248
– ident: ref8
  doi: 10.1109/TIE.2014.2316229
– ident: ref31
  doi: 10.1109/TPEL.2016.2602285
– ident: ref13
  doi: 10.1109/TPEL.2011.2180928
– ident: ref18
  doi: 10.1109/TPEL.2017.2692276
– ident: ref34
  doi: 10.1109/ACCESS.2020.2983090
– ident: ref15
  doi: 10.1109/TPEL.2018.2890292
– ident: ref10
  doi: 10.1109/TIE.2013.2258304
– ident: ref16
  doi: 10.1109/TPEL.2019.2897007
– ident: ref27
  doi: 10.1109/TPEL.2020.2975256
– ident: ref9
  doi: 10.1109/TIE.2012.2205356
– ident: ref4
  doi: 10.1109/TPEL.2015.2413815
– ident: ref7
  doi: 10.1109/TPEL.2013.2256149
SSID ssj0014501
Score 2.5106916
Snippet Dual active bridges (DABs) may lose zero voltage switching (ZVS) operation when the junction capacitance of semiconductors cannot be fully charged or...
SourceID proquest
crossref
ieee
SourceType Aggregation Database
Publisher
StartPage 6157
SubjectTerms Capacitance
Capacitance bridges
Dead time
dual active bridge (DAB)
Electric bridges
Electric converters
Inductors
junction capacitance
Junctions
Modulation
Phase modulation
soft switching
Switches
Switching
Voltage
Zero voltage switching
Title Influence of Junction-Capacitance and Dead-Time on Dual-Active-Bridge Actual Soft-Switching-Range: Analytic Analysis and Solution
URI https://ieeexplore.ieee.org/document/9985460
https://www.proquest.com/docview/2786974487
Volume 38
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LS8QwEA7qSQ--xfVFDp7ErNkkfXlbdZdVVMTdBW8laScgSle0i-DNf-4kbRdRD95aaErITDLzZeabIeQwByuj3MYMAhdmRA1h2oYhs5yD4jIB4UsK3dyGg7G6egge5sjxjAsDAD75DNru0cfy80k2dVdlJwgNAhUiQJ-PkqTias0iBirwrY5x0wQMMYSsI5gdnpyM7nrXiASFaEtX7MVRUb7ZIN9U5ddJ7M1Lf4XcNBOrskqe2tPStLOPHzUb_zvzVbJc-5m0WynGGpmDYp0sfas-uEE-L5sGJXRi6RUaOCckdo7mM3ssnTZQXeT0ArWAOaYInRT0YqqfWdefkezMc71o11NQ6BDPczZ8fyx9cia7d6SFU-prnuAUaFP8xP-yuYvbJON-b3Q-YHVHBpaha1QylXPr-uBKg34Reo6QyI6xOhImEXEmNY-VykUSZviGMsANqHUWcwBhrdAqkltkoZgUsE1oZGKrhOWd3GEia40JNYJlkEaoHEC2yFEjo_SlKryResDCk9QJNHUCTWuBtsiGW_PZh_Vyt8heI9W03ppvqYjiEEEUArWdv0ftkkXXU77KatwjC-XrFPbR8yjNgVe5Lxp01bA
link.rule.ids 315,783,787,799,27936,27937,55086
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LbxMxEB5V4UA58GoRgQA-cEJ14tjeV28hTZWWpEJtKuW2snfHUgXaINioUm_88469u1EFHLjtSuuV5Rl75vPMNwPwsUSnktKlHCMfZiQN4cbFMXdCoBYqQxlKCi0v4vm1Pl9H6z042nFhEDEkn-HQP4ZYfrkptv6qbETQINIxAfRH5FenccPW2sUMdBSaHdO2iTihCNXGMMciG62-zhaEBaUcKl_uxZNRHlih0Fblr7M4GJjTZ7DsptbklXwbbms7LO7-qNr4v3N_Dk9bT5NNGtV4AXtYvYQnD-oPHsDvs65FCds4dk4mzouJT8mAFje11wdmqpKdkB5wzxVhm4qdbM13PgmnJP8c2F5sEkgo7IpOdH51e1OH9Ex-6WkLxyxUPaEpsK78Sfhldxt3CNens9V0ztueDLwg56jmuhTOd8JVljwj8h0xU2PrTCJtJtNCGZFqXcosLuiNZEBb0JgiFYjSOWl0ol5Br9pU-BpYYlOnpRPj0qMi56yNDcFlVFbqElH14VMno_xHU3ojD5BFZLkXaO4FmrcC7cOBX_Pdh-1y92HQSTVvN-evXCZpTDCKoNqbf4_6AI_nq-UiX5xdfHkL-77DfJPjOIBe_XOL78gPqe37oH73blfY-w
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Influence+of+Junction-Capacitance+and+Dead-Time+on+Dual-Active-Bridge+Actual+Soft-Switching-Range%3A+Analytic+Analysis+and+Solution&rft.jtitle=IEEE+transactions+on+power+electronics&rft.au=Wang%2C+Zhe&rft.au=Li%2C+Chi&rft.au=Liu%2C+Jiye&rft.au=Zheng%2C+Zedong&rft.date=2023-05-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=0885-8993&rft.eissn=1941-0107&rft.volume=38&rft.issue=5&rft.spage=6157&rft_id=info:doi/10.1109%2FTPEL.2022.3228338&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0885-8993&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0885-8993&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0885-8993&client=summon