Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy

• Published in: ECS transactions Vol. 98; no. 5; pp. 291 - 300
• Main Authors: Yokogawa, Ryo, Kurosawa, Masashi, Ogura, Atsushi
• Format: Journal Article
• Language: English
• Published: The Electrochemical Society, Inc 08.09.2020
• DOI: 10.1149/09805.0291ecst
• ISSN: 1938-5862

We report on the strain-shift coefficient of silicon tin (SiSn) alloys obtained by ultraviolet (UV) Raman spectroscopy. The values of the Raman peak shift of the Si-Si mode for the SiSn (Sn fraction: 0.5, 0.9, 1.8, 2.2, and 6.0%) thin films were found to increase with Sn fraction and it indicates that compressive strain is induced in the SiSn films. The strain-shift coefficient of the Si-Si mode obtained from linear fits to the measurement data (UV Raman spectroscopy and X-ray diffraction reciprocal space mapping) has a good agreement with the values of the strain-shift coefficients about strained Si and strained silicon germanium, and commercial high-purity Si reported by previous studies. The strain-shift coefficient determined by in this work contribute to realize strain measurements for the next-generation SiSn devices such as near-infrared optical and thermoelectric devices.