An investigation on GaN/ porous-Si NO2 gas sensor fabricated by pulsed laser ablation in liquid
Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the drop-casting method for NO2 gas-sensor fabrication. Ablation was performed in ethanol using two laser wavelengths, namely, 532 and 1064 nm....
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Published in | Sensors and actuators. B, Chemical Vol. 367; p. 132163 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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Elsevier B.V
15.09.2022
Elsevier Science Ltd |
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Abstract | Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the drop-casting method for NO2 gas-sensor fabrication. Ablation was performed in ethanol using two laser wavelengths, namely, 532 and 1064 nm. The XRD pattern showed a high and sharp peak at 2θ= 29.49°, indicating enhanced GaN formation using a 532 nm laser wavelength. AFM and FESEM analyses confirmed increased GaN grain growth at the same wavelength. The optical reflectance of the GaN sample showed higher reflectance at 532 nm than at 1064 nm. The optical-energy bandgap was more elevated at 532 nm than at 1064 nm. Photoluminescence analysis revealed that the 532 nm sample had a higher-intensity peak than the 1064 nm one. Device-performance studies showed the most enhanced sensor response (158.49%), highest sensitivity (2.109 ppm), and best response time (13.5 s) at 250 °C for the sample prepared using 532 nm laser wavelength.
•high quality GaN/nano crystalline Si was achieved.•high quality GaN nano films was ablated and deposited using Pulsed Laser.•A gas sensors devices have been fabricated. |
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AbstractList | Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the drop-casting method for NO2 gas-sensor fabrication. Ablation was performed in ethanol using two laser wavelengths, namely, 532 and 1064 nm. The XRD pattern showed a high and sharp peak at 2θ= 29.49°, indicating enhanced GaN formation using a 532 nm laser wavelength. AFM and FESEM analyses confirmed increased GaN grain growth at the same wavelength. The optical reflectance of the GaN sample showed higher reflectance at 532 nm than at 1064 nm. The optical-energy bandgap was more elevated at 532 nm than at 1064 nm. Photoluminescence analysis revealed that the 532 nm sample had a higher-intensity peak than the 1064 nm one. Device-performance studies showed the most enhanced sensor response (158.49%), highest sensitivity (2.109 ppm), and best response time (13.5 s) at 250 °C for the sample prepared using 532 nm laser wavelength. Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the drop-casting method for NO2 gas-sensor fabrication. Ablation was performed in ethanol using two laser wavelengths, namely, 532 and 1064 nm. The XRD pattern showed a high and sharp peak at 2θ= 29.49°, indicating enhanced GaN formation using a 532 nm laser wavelength. AFM and FESEM analyses confirmed increased GaN grain growth at the same wavelength. The optical reflectance of the GaN sample showed higher reflectance at 532 nm than at 1064 nm. The optical-energy bandgap was more elevated at 532 nm than at 1064 nm. Photoluminescence analysis revealed that the 532 nm sample had a higher-intensity peak than the 1064 nm one. Device-performance studies showed the most enhanced sensor response (158.49%), highest sensitivity (2.109 ppm), and best response time (13.5 s) at 250 °C for the sample prepared using 532 nm laser wavelength. •high quality GaN/nano crystalline Si was achieved.•high quality GaN nano films was ablated and deposited using Pulsed Laser.•A gas sensors devices have been fabricated. |
ArticleNumber | 132163 |
Author | Salim, Evan T. A.Alwahib, Ali Hashim, U. Abdul Amir, Husam Aldin A. Fakhri, Makram A. Alsultany, Forat H. |
Author_xml | – sequence: 1 givenname: Husam Aldin A. surname: Abdul Amir fullname: Abdul Amir, Husam Aldin A. organization: Laser and Optoelectronic Department, University of Technology-Iraq, Baghdad, Iraq – sequence: 2 givenname: Makram A. surname: Fakhri fullname: Fakhri, Makram A. email: makram.a.fakhri@uotechnology.edu.iq, mokaram_76@yahoo.com organization: Laser and Optoelectronic Department, University of Technology-Iraq, Baghdad, Iraq – sequence: 3 givenname: Ali surname: A.Alwahib fullname: A.Alwahib, Ali organization: Laser and Optoelectronic Department, University of Technology-Iraq, Baghdad, Iraq – sequence: 4 givenname: Evan T. surname: Salim fullname: Salim, Evan T. email: evan.t.salim@uotechnology.edu.iq, evan_tarq@yahoo.com organization: Applied Science Department, University of Technology-Iraq, Baghdad, Iraq – sequence: 5 givenname: Forat H. surname: Alsultany fullname: Alsultany, Forat H. organization: Al-Mustaqbal University College, Department of Medical Physics, Iraq – sequence: 6 givenname: U. surname: Hashim fullname: Hashim, U. organization: Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis, Malaysia |
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Keywords | Gallium nitride/Porous Si Pulsed laser ablation, NO2 gas sensor Sensitivity Sensor response |
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Snippet | Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the... |
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SubjectTerms | Ablation Ethanol Gallium nitride/Porous Si Gallium nitrides Gas sensors Grain growth Laser ablation Lasers Nanostructure Nitrogen dioxide Photoluminescence Pulsed laser ablation, NO2 gas sensor Pulsed lasers Reflectance Response time Sensitivity Sensor response Sensors Silicon substrates |
Title | An investigation on GaN/ porous-Si NO2 gas sensor fabricated by pulsed laser ablation in liquid |
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