An investigation on GaN/ porous-Si NO2 gas sensor fabricated by pulsed laser ablation in liquid

Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the drop-casting method for NO2 gas-sensor fabrication. Ablation was performed in ethanol using two laser wavelengths, namely, 532 and 1064 nm....

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Published inSensors and actuators. B, Chemical Vol. 367; p. 132163
Main Authors Abdul Amir, Husam Aldin A., Fakhri, Makram A., A.Alwahib, Ali, Salim, Evan T., Alsultany, Forat H., Hashim, U.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 15.09.2022
Elsevier Science Ltd
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Abstract Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the drop-casting method for NO2 gas-sensor fabrication. Ablation was performed in ethanol using two laser wavelengths, namely, 532 and 1064 nm. The XRD pattern showed a high and sharp peak at 2θ= 29.49°, indicating enhanced GaN formation using a 532 nm laser wavelength. AFM and FESEM analyses confirmed increased GaN grain growth at the same wavelength. The optical reflectance of the GaN sample showed higher reflectance at 532 nm than at 1064 nm. The optical-energy bandgap was more elevated at 532 nm than at 1064 nm. Photoluminescence analysis revealed that the 532 nm sample had a higher-intensity peak than the 1064 nm one. Device-performance studies showed the most enhanced sensor response (158.49%), highest sensitivity (2.109 ppm), and best response time (13.5 s) at 250 °C for the sample prepared using 532 nm laser wavelength. •high quality GaN/nano crystalline Si was achieved.•high quality GaN nano films was ablated and deposited using Pulsed Laser.•A gas sensors devices have been fabricated.
AbstractList Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the drop-casting method for NO2 gas-sensor fabrication. Ablation was performed in ethanol using two laser wavelengths, namely, 532 and 1064 nm. The XRD pattern showed a high and sharp peak at 2θ= 29.49°, indicating enhanced GaN formation using a 532 nm laser wavelength. AFM and FESEM analyses confirmed increased GaN grain growth at the same wavelength. The optical reflectance of the GaN sample showed higher reflectance at 532 nm than at 1064 nm. The optical-energy bandgap was more elevated at 532 nm than at 1064 nm. Photoluminescence analysis revealed that the 532 nm sample had a higher-intensity peak than the 1064 nm one. Device-performance studies showed the most enhanced sensor response (158.49%), highest sensitivity (2.109 ppm), and best response time (13.5 s) at 250 °C for the sample prepared using 532 nm laser wavelength.
Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the drop-casting method for NO2 gas-sensor fabrication. Ablation was performed in ethanol using two laser wavelengths, namely, 532 and 1064 nm. The XRD pattern showed a high and sharp peak at 2θ= 29.49°, indicating enhanced GaN formation using a 532 nm laser wavelength. AFM and FESEM analyses confirmed increased GaN grain growth at the same wavelength. The optical reflectance of the GaN sample showed higher reflectance at 532 nm than at 1064 nm. The optical-energy bandgap was more elevated at 532 nm than at 1064 nm. Photoluminescence analysis revealed that the 532 nm sample had a higher-intensity peak than the 1064 nm one. Device-performance studies showed the most enhanced sensor response (158.49%), highest sensitivity (2.109 ppm), and best response time (13.5 s) at 250 °C for the sample prepared using 532 nm laser wavelength. •high quality GaN/nano crystalline Si was achieved.•high quality GaN nano films was ablated and deposited using Pulsed Laser.•A gas sensors devices have been fabricated.
ArticleNumber 132163
Author Salim, Evan T.
A.Alwahib, Ali
Hashim, U.
Abdul Amir, Husam Aldin A.
Fakhri, Makram A.
Alsultany, Forat H.
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  givenname: Makram A.
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  email: makram.a.fakhri@uotechnology.edu.iq, mokaram_76@yahoo.com
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  givenname: Evan T.
  surname: Salim
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  surname: Hashim
  fullname: Hashim, U.
  organization: Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis, Malaysia
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Keywords Gallium nitride/Porous Si
Pulsed laser ablation, NO2 gas sensor
Sensitivity
Sensor response
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Snippet Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN nanostructure was deposited onto the porous-silicon substrate through the...
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SubjectTerms Ablation
Ethanol
Gallium nitride/Porous Si
Gallium nitrides
Gas sensors
Grain growth
Laser ablation
Lasers
Nanostructure
Nitrogen dioxide
Photoluminescence
Pulsed laser ablation, NO2 gas sensor
Pulsed lasers
Reflectance
Response time
Sensitivity
Sensor response
Sensors
Silicon substrates
Title An investigation on GaN/ porous-Si NO2 gas sensor fabricated by pulsed laser ablation in liquid
URI https://dx.doi.org/10.1016/j.snb.2022.132163
https://www.proquest.com/docview/2696134492
Volume 367
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