Some comments on the self-hiding of electrons at very low temperature
The electrons on the orbitals of the crystallizing π-bondings are absorbed in the mesons of the nucleons at very low temperature because the π-rays are efficiently resonant with each other at low temperature. The crystallizing π-bonding is changed to the covalent implosion bonding at very low temper...
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Published in | Journal of materials processing technology Vol. 96; no. 1; pp. 108 - 111 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.11.1999
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Subjects | |
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Abstract | The electrons on the orbitals of the crystallizing π-bondings are absorbed in the mesons of the nucleons at very low temperature because the π-rays are efficiently resonant with each other at low temperature. The crystallizing π-bonding is changed to the covalent implosion bonding at very low temperature and then the electrons on the orbitals become self-hiding. Metallic compounds and pure metal superconductors make deficient atom sites by this self-hiding of electrons at very low temperature. |
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AbstractList | The electrons on the orbitals of the crystallizing π-bondings are absorbed in the mesons of the nucleons at very low temperature because the π-rays are efficiently resonant with each other at low temperature. The crystallizing π-bonding is changed to the covalent implosion bonding at very low temperature and then the electrons on the orbitals become self-hiding. Metallic compounds and pure metal superconductors make deficient atom sites by this self-hiding of electrons at very low temperature. |
Author | Oh, Hung-Kuk |
Author_xml | – sequence: 1 givenname: Hung-Kuk surname: Oh fullname: Oh, Hung-Kuk organization: Department of Mechanical and Industrial Engineering, Ajou University, Wonchondong San 5, Suwon 442-749, South Korea |
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Cites_doi | 10.1016/S0924-0136(97)00259-8 10.1016/S0924-0136(96)02509-5 10.1016/0924-0136(95)02252-X |
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References | M. Ali Omar, Elementary Solid State Physics, 1975, Addison-Wesley Reading, MA, pp. 424–454 Oh (BIB2) 1997; 65 Oh (BIB1) 1998; 74 Oh (BIB3) 1997; 66 Oh (10.1016/S0924-0136(99)00281-2_BIB1) 1998; 74 Oh (10.1016/S0924-0136(99)00281-2_BIB2) 1997; 65 10.1016/S0924-0136(99)00281-2_BIB4 Oh (10.1016/S0924-0136(99)00281-2_BIB3) 1997; 66 |
References_xml | – volume: 66 start-page: 153 year: 1997 end-page: 157 ident: BIB3 article-title: Some comments in three-dimensional crystallizing π-bonding, fatigue and the fatigue limit publication-title: J. Mater. Process. Technol. contributor: fullname: Oh – volume: 65 start-page: 127 year: 1997 end-page: 333 ident: BIB2 article-title: Three-dimensional crystallizing combined π-bonding orbitals (`o's' bonding) and plastic deformation by twins and dislocation publication-title: J. Mater. Process. Technol. contributor: fullname: Oh – volume: 74 start-page: 126 year: 1998 end-page: 130 ident: BIB1 article-title: Vortex of electrons, π-Bonding of atoms and superconduction publication-title: J. Mater. Process. Technol. contributor: fullname: Oh – ident: 10.1016/S0924-0136(99)00281-2_BIB4 – volume: 74 start-page: 126 year: 1998 ident: 10.1016/S0924-0136(99)00281-2_BIB1 article-title: Vortex of electrons, π-Bonding of atoms and superconduction publication-title: J. Mater. Process. Technol. doi: 10.1016/S0924-0136(97)00259-8 contributor: fullname: Oh – volume: 66 start-page: 153 year: 1997 ident: 10.1016/S0924-0136(99)00281-2_BIB3 article-title: Some comments in three-dimensional crystallizing π-bonding, fatigue and the fatigue limit publication-title: J. Mater. Process. Technol. doi: 10.1016/S0924-0136(96)02509-5 contributor: fullname: Oh – volume: 65 start-page: 127 year: 1997 ident: 10.1016/S0924-0136(99)00281-2_BIB2 article-title: Three-dimensional crystallizing combined π-bonding orbitals (`o's' bonding) and plastic deformation by twins and dislocation publication-title: J. Mater. Process. Technol. doi: 10.1016/0924-0136(95)02252-X contributor: fullname: Oh |
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SubjectTerms | Crystallizing π-bonding Self-hiding of electrons Superconductor |
Title | Some comments on the self-hiding of electrons at very low temperature |
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