Charge trapping and photovoltaic characteristics in monocrystalline silicon solar cells employing molybdenum oxide and copper oxide stacked hole-selective contacts

• Published in: Vacuum Vol. 215; p. 112326
• Main Authors: Cheng, Chin-Lung, Liu, Chi-Chung, Wang, Wen-Ting
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.09.2023
• Subjects: Copper oxide; Hole-selective contacts; Molybdenum oxide; Silicon solar cells; Solar energy materials; Silicon solar cells; Molybdenum oxide; Copper oxide; Solar energy materials; Hole-selective contacts
• DOI: 10.1016/j.vacuum.2023.112326
• ISSN: 0042-207X

A hole-selective contact (HSC) composed of stacked layers of molybdenum oxide (MoOx) and copper oxide (CuOx), called MOCOSL, has been proposed as passivation booster for screen-printed monocrystalline silicon solar cell (SMSC) applications. The passivation quality of MOCOSL is investigated by characterizing its charge trapping properties, including fixed oxide charge (Qf) and interface trap density (Dit). The conversion efficiency (CE) of SMSCs is improved by MOCOSL, resulting in an increase from 20.66% to 21.76%. This improvement is attributed to an increase in the negative Qf and a decrease in Dit, which result in an increase in the open circuit voltage (Voc) and short circuit current (Jsc). Specifically, the number of negative Qf is increased by MOCOSL, which helps to reduce the recombination of charge carriers. •The MOCOSL, a stacked MoOx and CuOx hole-selective contact, is proposed as a passivation booster.•An MOCOSL with a high negative fixed oxide charge (Qf) plays a crucial role in enhancing hole transportation.•The interface trap density between MOCOSL and Si interfaces can be improved by increasing the value of Qf in MOCOSL.•The conversion efficiency of solar cells has been improved by MOCOSL, resulting in an increase from 20.66% to 21.76%.