MBE Growth of II-VI Epilayers and QW Structures on Hexagonal ZnCdS and CdSSe Substrates

ZnTe, ZnSe layers and ZnCdTe/ZnTe, ZnCdSe/ZnSe quantum well structures were grown on hexagonal Zn0.05Cd0.95S(0001) and CdS0.85Se0.15($ 11{\underline 2}0 $) by molecular beam epitaxy and studied by cathodoluminescence (CL), photoreflection, and X‐ray diffraction. The structures grown on the ($ 11{\un...

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Published inphysica status solidi (b) Vol. 229; no. 1; pp. 63 - 67
Main Authors Kozlovsky, V.I., Martovitsky, V.P., Skasyrsky, Ya.K., Sadofyev, Yu.G., Turyansky, A.G.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag Berlin GmbH 01.01.2002
WILEY‐VCH Verlag Berlin GmbH
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Abstract ZnTe, ZnSe layers and ZnCdTe/ZnTe, ZnCdSe/ZnSe quantum well structures were grown on hexagonal Zn0.05Cd0.95S(0001) and CdS0.85Se0.15($ 11{\underline 2}0 $) by molecular beam epitaxy and studied by cathodoluminescence (CL), photoreflection, and X‐ray diffraction. The structures grown on the ($ 11{\underline 2}0 $) substrates had rough surface while the structures grown on the (0001) substrate were mirror‐like. All structures were cubic. In the ZnSe based structures, the 〈111〉 and 〈 $ {\underline 1}10 $ 〉 lattice directions of epilayers coincided with the 〈0001〉 and 〈$ 11{\underline 2}0 $〉 directions of CdZnS(0001) substrate, respectively. High mismatching leaded to a lattice relaxation of these epilayers by introduction of misfit dislocations. This was the reason of low CL intensity. In spite of higher mismatching, the ZnTe based epilayers grown on (0001) substrates had more perfect lattice structure and more intense CL than ZnSe based epilayers. Cubic lattice of ZnTe was found to be rotated approximately by 15° around the 〈111〉 direction coincided with the 〈0001〉 direction of the (0001) substrate. It was proposed that a geometrical lattice matching took place at epitaxy of ZnTe on the CdZnS(0001).
AbstractList ZnTe, ZnSe layers and ZnCdTe/ZnTe, ZnCdSe/ZnSe quantum well structures were grown on hexagonal Zn0.05Cd0.95S(0001) and CdS0.85Se0.15($ 11{\underline 2}0 $) by molecular beam epitaxy and studied by cathodoluminescence (CL), photoreflection, and X‐ray diffraction. The structures grown on the ($ 11{\underline 2}0 $) substrates had rough surface while the structures grown on the (0001) substrate were mirror‐like. All structures were cubic. In the ZnSe based structures, the 〈111〉 and 〈 $ {\underline 1}10 $ 〉 lattice directions of epilayers coincided with the 〈0001〉 and 〈$ 11{\underline 2}0 $〉 directions of CdZnS(0001) substrate, respectively. High mismatching leaded to a lattice relaxation of these epilayers by introduction of misfit dislocations. This was the reason of low CL intensity. In spite of higher mismatching, the ZnTe based epilayers grown on (0001) substrates had more perfect lattice structure and more intense CL than ZnSe based epilayers. Cubic lattice of ZnTe was found to be rotated approximately by 15° around the 〈111〉 direction coincided with the 〈0001〉 direction of the (0001) substrate. It was proposed that a geometrical lattice matching took place at epitaxy of ZnTe on the CdZnS(0001).
Author Turyansky, A.G.
Kozlovsky, V.I.
Sadofyev, Yu.G.
Skasyrsky, Ya.K.
Martovitsky, V.P.
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10.1016/S0022-0248(00)00074-9
10.1063/1.367112
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Title MBE Growth of II-VI Epilayers and QW Structures on Hexagonal ZnCdS and CdSSe Substrates
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