Experimental analysis of millimeter wave coplanar waveguide slow wave structures on GaAs

Microwave coplanar waveguide slow wave structures suitable for use in traveling wave electrooptic modulators were experimentally investigated to 40 GHz. Velocity slowing is achieved by introducing periodic slots in the ground planes. Structures both on semiinsulating GaAs substrates and on epitaxial...

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Published inIEEE transactions on microwave theory and techniques Vol. 42; no. 10; pp. 1918 - 1924
Main Authors Spickermann, R., Dagli, N.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.1994
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Abstract Microwave coplanar waveguide slow wave structures suitable for use in traveling wave electrooptic modulators were experimentally investigated to 40 GHz. Velocity slowing is achieved by introducing periodic slots in the ground planes. Structures both on semiinsulating GaAs substrates and on epitaxial layers grown by molecular beam epitaxy on semiinsulating GaAs substrates were examined. In the measurements the thru-reflect-line calibration method was used and its limitations are discussed. The characteristic impedance, phase velocity and loss coefficient of these lines were extracted from measured S-parameters. Effects of various dimensions on these line properties are presented and discussed. Results indicate that significant phase velocity slowing without dispersion at least up to 40 GHz is possible with this approach. This is true both on semi-insulating GaAs substrates and specially designed epitaxial layers. A design approach to achieve a specified phase velocity and characteristic impedance is given.< >
AbstractList Microwave coplanar waveguide slow wave structures suitable for use in traveling wave electrooptic modulators were experimentally investigated to 40 GHz. Velocity slowing is achieved by introducing periodic slots in the ground planes. Structures both on semiinsulating GaAs substrates and on epitaxial layers grown by molecular beam epitaxy on semiinsulating GaAs substrates were examined. In the measurements the thru-reflect-line calibration method was used and its limitations are discussed. The characteristic impedance, phase velocity, and loss coefficient of these lines were extracted from measured S-parameters. Effects of various dimensions on these line properties are presented and discussed. Results indicate that significant phase velocity slowing without dispersion at least up to 40 GHz is possible with this approach. This is true both on semiinsulating GaAs substrates and specially designed epitaxial layers. (Author)
Microwave coplanar waveguide slow wave structures suitable for use in traveling wave electrooptic modulators were experimentally investigated to 40 GHz. Velocity slowing is achieved by introducing periodic slots in the ground planes. Structures both on semiinsulating GaAs substrates and on epitaxial layers grown by molecular beam epitaxy on semi-insulating GaAs substrates were examined. In the measurements the thru-reflect-line calibration method was used and its limitations are discussed. The characteristic impedance, phase velocity and loss coefficient of these lines were extracted from measured S-parameters. Effects of various dimensions on these line properties are presented and discussed. Results indicate that significant phase velocity slowing without dispersion at least up to 40 GHz is possible with this approach. This is true both on semi-insulating GaAs substrates and specially designed epitaxial layers. A design approach to achieve a specified phase velocity and characteristic impedance is given.
Microwave coplanar waveguide slow wave structures suitable for use in traveling wave electrooptic modulators were experimentally investigated to 40 GHz. Velocity slowing is achieved by introducing periodic slots in the ground planes. Structures both on semiinsulating GaAs substrates and on epitaxial layers grown by molecular beam epitaxy on semiinsulating GaAs substrates were examined. In the measurements the thru-reflect-line calibration method was used and its limitations are discussed. The characteristic impedance, phase velocity and loss coefficient of these lines were extracted from measured S-parameters. Effects of various dimensions on these line properties are presented and discussed. Results indicate that significant phase velocity slowing without dispersion at least up to 40 GHz is possible with this approach. This is true both on semi-insulating GaAs substrates and specially designed epitaxial layers. A design approach to achieve a specified phase velocity and characteristic impedance is given.< >
Microwave coplanar waveguide slow wave structures suitable for use in traveling wave electrooptic modulators were experimentally investigated to 40 GHz. Velocity slowing is achieved by introducing periodic slots in the ground planes. Structures both on semiinsulating GaAs substrates and on epitaxial layers grown by molecular beam epitaxy on semiinsulating GaAs substrates were examined. In the measurements the thru-reflect-line calibration method was used and its limitations are discussed. The characteristic impedance, phase velocity and loss coefficient of these lines were extracted from measured S-parameters. Effects of various dimensions on these line properties are presented and discussed. Results indicate that significant phase velocity slowing without dispersion at least up to 40 GHz is possible with this approach. This is true both on semi-insulating GaAs substrates and specially designed epitaxial layers. A design approach to achieve a specified phase velocity and characteristic impedance is given
Author Dagli, N.
Spickermann, R.
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Snippet Microwave coplanar waveguide slow wave structures suitable for use in traveling wave electrooptic modulators were experimentally investigated to 40 GHz....
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StartPage 1918
SubjectTerms Calibration
Coplanar waveguides
Electrooptic modulators
Electrooptical waveguides
Epitaxial layers
Gallium arsenide
Impedance
Millimeter wave technology
Molecular beam epitaxial growth
Substrates
Title Experimental analysis of millimeter wave coplanar waveguide slow wave structures on GaAs
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