High-temperature LTCC assembly and design of SiC BJT-based negative charge pump

This paper describes the negative charge pump design in state-of-the-art SiC BJT technology along with its assembly on the LTCC module for extremely high-temperature applications. Kiln thermal oven is used to test the system at 500°C and evaluate the system's high-temperature performance. The c...

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Bibliographic Details
Published inInternational journal of electronics letters Vol. 10; no. 2; pp. 177 - 187
Main Authors Roy, Sajib, Faruque, Khandokar Asif, Abbasi, Affan, Mantooth, Alan
Format Journal Article
LanguageEnglish
Published Abingdon Taylor & Francis 03.04.2022
Taylor & Francis Ltd
Subjects
Assembly
Charge pump
Charge pumps
Circuit design
high-temperature
LTCC
Metallizing
Modules
RC oscillator
SiC BJT
Thermal stability
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Summary:This paper describes the negative charge pump design in state-of-the-art SiC BJT technology along with its assembly on the LTCC module for extremely high-temperature applications. Kiln thermal oven is used to test the system at 500°C and evaluate the system's high-temperature performance. The charge pump design is separated into two sections: a diode-connected BJT charge pump and a cross-coupled RC oscillator. Commercially available NHT dielectric capacitors (390 pF) are used for both circuit sections. The designed LTCC module used DuPont™ 9k7 dielectric with gold metallization for routing traces. The oscillator output frequency varied from 35.7 kHz to 125 kHz across temperature for a fixed supply voltage of 11 V.
ISSN:2168-1724
2168-1732
DOI:10.1080/21681724.2021.1901997