Multi-charged acceptor centers in p-doped Si/Si1−xGex/Si quantum wells in the presence of a magnetic field

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Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 2; no. 1-4; pp. 785 - 788
Main Authors Rego, Luis G.C., Brum, José A, Hawrylak, Pawel
Format Journal Article
LanguageEnglish
Published 01.07.1998
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Author Brum, José A
Rego, Luis G.C.
Hawrylak, Pawel
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Cites_doi 10.1103/PhysRevLett.71.613
10.1103/PhysRevB.45.1951
10.1103/PhysRevB.51.18049
10.1103/PhysRevB.31.888
10.1016/0038-1098(92)90305-S
10.1016/0038-1098(93)90617-V
10.1103/PhysRevB.54.1320
10.1103/PhysRevB.55.15694
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Hawrylak (10.1016/S1386-9477(98)00160-X_BIB4) 1993; 88
Shields (10.1016/S1386-9477(98)00160-X_BIB1) 1995; 51
Broido (10.1016/S1386-9477(98)00160-X_BIB5) 1985; 31
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Title Multi-charged acceptor centers in p-doped Si/Si1−xGex/Si quantum wells in the presence of a magnetic field
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