Thin Emitter Structure Improved Turn-on Characteristics in RSD

• Published in: Transactions of Tianjin University Vol. 14; no. 3; pp. 182 - 185
• Main Author: 梁琳 余岳辉 周郁明 王璐
• Format: Journal Article
• Language: English
• Published: Heidelberg Tianjin University 01.06.2008; Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
• Subjects: Engineering; Humanities and Social Sciences; Mechanical Engineering; multidisciplinary; Science; 前向电压降落; 发射器; 接通特征; 转向开关负阻半导体; thin emitter; turn-on characteristics; reversely switched dynistor(RSD); forward voltage drop; switch; reversely switched dynistor (RSD)
• ISSN: 1006-4982; 1995-8196
• DOI: 10.1007/s12209-008-0033-7

The thin emitter structure was introduced into reversely switched dynistor（RSD） to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing the extraction action for the triggering plasma layer P1 during turn-on process, and satisfying the requirement that triggering electric charge cannot be exhausted and therefore enables RSD to turn on uniformly. The on-state thin emitter RSD was equivalent to an asymmetric pin diode model. The simulation result shows that the forward voltage drop of RSD falls with the decrease of doping dose in p^＋-emitter in a certain range, and when the doping concentration is extremely tow, the decrease of the width of p^＋-emitter can obtain a tow forward voltage drop. Thin emitter RSD chips were made by sintering AI on n-Si. The test result shows that their turn-on process is uniform and the voltage drop is 7.5 V when the peak conversion current is 5 500 A.