Nitridation of epitaxially grown 6.1 Å semiconductors studied by X-ray photoelectron spectroscopy

• Published in: Applied surface science Vol. 222; no. 1-4; pp. 6 - 12
• Main Authors: Preisler, E.J, Strittmatter, R.P, McGill, T.C, Hill, C.J
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 30.01.2004; Elsevier Science
• Subjects: Composition and phase identification; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Epitaxial surfaces; Exact sciences and technology; Materials science; Physics; Semiconductors; Surface hardening: nitridation, carburization, carbonitridation; Surface treatments; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; X-ray photoelectron spectroscopy; Semiconductors; Epitaxial surfaces; X-ray photoelectron spectroscopy; Gallium antimonides; Semiconductor materials; Plasma assisted processing; Binary compounds; Surface treatments; Surface composition; Indium arsenides; Nitridation; Aluminium antimonides; X-ray photoelectron spectra
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2003.08.017

We present a detailed analysis of the state of surfaces of the 6.1Å family of semiconductors (InAs, GaSb and AlSb) under exposure to a nitrogen plasma. X-ray photoelectron spectroscopy (XPS) is used to determine the species created at the surface and their relative abundance. We find evidence that clean epitaxial surfaces exposed to the plasma form both VN (SbN and AsN) and IIIN (AlN, GaN and InN) compounds, but in different amounts and different proportions for each of the materials.