Influence of sputtered gallium oxide as buffer or high-resistive layer on performance of Cu(In,Ga)Se2-based solar cells
Oxides could be candidates for buffer, passivation, or high-resistive (HR) layers in Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. From an industrial point of view, a high-rate and dry deposition method like sputtering would be the most favorable technique. This study presents results with the wide-ba...
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| Published in | Journal of materials research Vol. 37; no. 11; pp. 1825 - 1834 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Cham
Springer International Publishing
14.06.2022
Springer Nature B.V |
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| Abstract | Oxides could be candidates for buffer, passivation, or high-resistive (HR) layers in Cu(In,Ga)Se
2
(CIGS) thin-film solar cells. From an industrial point of view, a high-rate and dry deposition method like sputtering would be the most favorable technique. This study presents results with the wide-bandgap material gallium oxide (Ga
2
O
3
) deposited by magnetron sputtering applied as a substitution for the traditional CdS buffer or the intrinsic ZnO (i-ZnO) HR layer. With state-of-the-art CIGS absorber layers, subject to a RbF post-deposition treatment, an ammonia rinsing of the CIGS surface before sputtering of X-ray amorphous Ga
2
O
3
has mostly a positive impact on device performance reaching efficiencies up to 14%. An efficiency of 20.2% with anti-reflective coating was achieved with Ga
2
O
3
applied as HR layer as substitution for i-ZnO in combination with a solution-grown CdS buffer and ZnO:Al as front contact. This result is comparable to the efficiency of 20.4% for the CIGS/CdS/i-ZnO/ZnO:Al reference cell.
Graphical abstract |
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| AbstractList | Oxides could be candidates for buffer, passivation, or high-resistive (HR) layers in Cu(In,Ga)Se2 (CIGS) thin-film solar cells. From an industrial point of view, a high-rate and dry deposition method like sputtering would be the most favorable technique. This study presents results with the wide-bandgap material gallium oxide (Ga2O3) deposited by magnetron sputtering applied as a substitution for the traditional CdS buffer or the intrinsic ZnO (i-ZnO) HR layer. With state-of-the-art CIGS absorber layers, subject to a RbF post-deposition treatment, an ammonia rinsing of the CIGS surface before sputtering of X-ray amorphous Ga2O3 has mostly a positive impact on device performance reaching efficiencies up to 14%. An efficiency of 20.2% with anti-reflective coating was achieved with Ga2O3 applied as HR layer as substitution for i-ZnO in combination with a solution-grown CdS buffer and ZnO:Al as front contact. This result is comparable to the efficiency of 20.4% for the CIGS/CdS/i-ZnO/ZnO:Al reference cell. Oxides could be candidates for buffer, passivation, or high-resistive (HR) layers in Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. From an industrial point of view, a high-rate and dry deposition method like sputtering would be the most favorable technique. This study presents results with the wide-bandgap material gallium oxide (Ga 2 O 3 ) deposited by magnetron sputtering applied as a substitution for the traditional CdS buffer or the intrinsic ZnO (i-ZnO) HR layer. With state-of-the-art CIGS absorber layers, subject to a RbF post-deposition treatment, an ammonia rinsing of the CIGS surface before sputtering of X-ray amorphous Ga 2 O 3 has mostly a positive impact on device performance reaching efficiencies up to 14%. An efficiency of 20.2% with anti-reflective coating was achieved with Ga 2 O 3 applied as HR layer as substitution for i-ZnO in combination with a solution-grown CdS buffer and ZnO:Al as front contact. This result is comparable to the efficiency of 20.4% for the CIGS/CdS/i-ZnO/ZnO:Al reference cell. Graphical abstract |
| Author | Hempel, Wolfram Hariskos, Dimitrios Paetel, Stefan Witte, Wolfram Menner, Richard |
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| Cites_doi | 10.7567/JJAP.56.08MC03 10.1002/pip.1244 10.1063/1.1825053 10.1016/j.solmat.2018.03.045 10.1016/j.tsf.2004.11.118 10.1016/j.solmat.2013.05.002 10.1063/1.4788717 10.1016/S0040-6090(00)01009-9 10.1007/978-3-030-37153-1 10.1021/acs.jpcc.8b00079 10.1021/acsami.8b14490 10.1002/pip.897 10.1149/2162-8777/abfc21 10.1109/PVSC45281.2020.9300930 10.1002/pssr.202100180 10.1109/JPHOTOV.2015.2396356 10.1002/aenm.201903752 10.1002/pip.955 10.1109/JPHOTOV.2017.2745710 10.1051/epjpv/2020010 10.1016/j.tsf.2013.10.036 10.1002/pip.2879 10.1002/aenm.201900408 10.1002/pssr.201600199 10.1016/j.solmat.2017.09.030 |
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| Keywords | Thin films Solar cells Cu(In,Ga)Se Wide bandgap Sputtering Gallium oxide |
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| References_xml | – reference: TaiKFKamadaRYagiokaTKatoTSugimotoHFrom 209 to 223% Cu(In, Ga)(S, Se)2 solar cell: reduced recombination rate at the heterojunction and the depletion region due to K-treatmentJpn. J. Appl. Phys.20175608MC0310.7567/JJAP.56.08MC03 – reference: H.A. Yetkin, T. Kodalle, T. Bertram, A. Vellanueva-Tovar, R. Klenk, B. Szyszka, R. Schlatmann, C.A. Kaufmann, in Proc. 47th IEEE Photovoltaic Specialists Conference (PVSC) 2020, Comparison of the Thermal Stability of Differently Buffered CIGSe Solar Cells. pp. 1192–1197 (2020) – reference: ChantanaJKatoTSugimotoHMinemotoTThin-film Cu(In, Ga)(Se, S)2-based solar cell with (Cd, Zn)S buffer layer and Zn1-xMgxO window layerProg. Photovolt. Res. Appl.2017254314401:CAS:528:DC%2BC2sXntVSjsbo%3D10.1002/pip.2879 – reference: IshizukaSTaguchiNNishinagaJKamikawaYTanakaSShibataHGroup III elemental composition dependence of RbF postdeposition treatment effects on Cu(In, Ga)Se2 thin films and solar cellsJ. Phys. Chem. C2018122380938171:CAS:528:DC%2BC1cXitVWhtb0%3D10.1021/acs.jpcc.8b00079 – reference: HeinemannMDvan HestMFAMContrerasMPerkinsJDZakutayevAKaufmannCAUnoldTGinleyDSBerryJJAmorphous oxides as electron transport layers in Cu(In, Ga)Se2 superstrate devicesPhys. Stat. Sol. A20172141600870 – reference: KatoTHandaAYagiokaTMatsuuraTYamamotoKHigashiSWuJ-LTaiKFHiroiHYoshiyamaTSakaiTSugimotoHEnhanced efficiency of Cd-free Cu(In, Ga)(Se, S)2 minimodules via (Zn, Mg)O second buffer layer and alkali metal post-treatmentIEEE J. Photovolt.201771773178010.1109/JPHOTOV.2017.2745710 – reference: WitteWPaetelSMennerRBauerAHariskosDThe application of sputtered gallium oxide as buffer for Cu(In, Ga)Se2 solar cellsPhys. Stat. Sol. (RRL)20211521001801:CAS:528:DC%2BB3MXhsFCnsLzM10.1002/pssr.202100180 – reference: Reference Air Mass 1.5 Spectra from the American Society for Testing and Materials (ASTM). NREL website, https://www.nrel.gov/grid/solar-resource/spectra-am1.5.html. 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| Snippet | Oxides could be candidates for buffer, passivation, or high-resistive (HR) layers in Cu(In,Ga)Se
2
(CIGS) thin-film solar cells. From an industrial point of... Oxides could be candidates for buffer, passivation, or high-resistive (HR) layers in Cu(In,Ga)Se2 (CIGS) thin-film solar cells. From an industrial point of... |
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| SubjectTerms | Ammonia Antireflection coatings Applied and Technical Physics Biomaterials Buffers Cadmium sulfide Chemistry and Materials Science Copper indium gallium selenides Deposition Gallium oxides Inorganic Chemistry Invited Paper Magnetron sputtering Materials Engineering Materials research Materials Science Nanotechnology Photovoltaic cells Solar cells Substitutes Thin films Zinc oxide |
| Title | Influence of sputtered gallium oxide as buffer or high-resistive layer on performance of Cu(In,Ga)Se2-based solar cells |
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