Annealing effect on the characteristics of La0.67Sr0.33MnO3 polycrystalline thin films produced by the sol–gel dip-coating process

• Published in: Journal of materials science. Materials in electronics Vol. 23; no. 2; pp. 605 - 611
• Main Authors: Goktas, Abdullah, Aslan, Ferhat, Mutlu, İbrahim Halil
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.02.2012; Springer
• Subjects: Annealing; Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Heat treatment; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials Science; Materials synthesis; materials processing; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Optical and Electronic Materials; Physics; Production techniques; Treatment of materials and its effects on microstructure and properties; Full Width Half Maximum; Manganite; Magnetic Domain Wall; Colossal Magneto Resistance; Film Sample; Coating process; Grain size analysis; Perovskite type compound; Polycrystal; Temperature effect; Ferromagnetic materials; Annealing temperature; Phase transitions; Powder; Thin film; Magnetic field effect; Paramagnetic materials; Dip coating; Magnetic field; Thermal characteristic; Grain size; Temperature dependence; Scanning electron microscopy; Annealing; Dielectric materials; Colossal magnetoresistance; Lattice parameters; X ray diffraction; Thickness; Silicon oxides; Manufacturing process; Sol gel process
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-011-0448-0

The effect of annealing temperature on selected characteristics of polycrystalline La 0.67 Sr 0.33 MnO 3 films, which have been produced on quartz substrates, was investigated. X-Ray powder diffraction patterns showed that the phase formation started at 873 K and all the films had perovskite structure. By increasing the annealing temperature, the lattice parameters were decreased. Scanning electron microscope indicated that the film thicknesses were approximately 3 μm and the average grain size of the samples varied between 30–100, 50–110, 70–120, and 100–150 nm for films annealed at 873, 973, 1,073, and 1,173 K, respectively. All the films showed a paramagnetic–ferromagnetic (T C ) and metal–insulator (T IM ) phase transition. The T C indicated a small variation [from 131 K (S4) to 124 K (S1)] as a function of annealing temperature, whereas the T IM went down from 212 K (S4) to 110 K (S1), a strong decrease of 102 K. A colossal magneto resistance with magneto resistance ratios of 130, 139, 156, and 163% were observed near T C and at 6 T magnetic field.