Impact of TID on the Analog Conductance and Training Accuracy of CBRAM-Based Neural Accelerator

• Published in: IEEE transactions on nuclear science Vol. 70; no. 12; pp. 2572 - 2577
• Main Authors: Apsangi, P., Chamele, N., Barnaby, H. J., Gonzalez-Velo, Y., Holbert, K. E., Kozicki, M. N.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2023; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Analog synapse; Artificial neural networks; Conductance; conductive bridge random access memory (CBRAM); Conductivity measurement; Deep learning; Depression; Gamma rays; Ionization; Irradiation; Neural networks; neuromorphic accelerator; neuromorphic computing; Neuromorphic engineering; Performance evaluation; Programming; Radiation; Random access memory; Resistance; resistive random access memory (RRAM); Scanning electron microscopy; Switches; Synapses; total ionizing dose (TID); Training

The changes caused by total ionizing dose (TID) in the conductance of the analog response of Ag-Ge30Se70 conductive bridge random access memory (CBRAM) based synapses are studied. The conductance was seen to be severely affected by 60Co gamma ray exposure. The devices were tested up to a TID of 1 Mr...