Graphene-Based Field-Effect Photodetector with HgCdTe Absorber

• Published in: Journal of electronic materials Vol. 53; no. 10; pp. 5865 - 5873
• Main Authors: Sheremet, Volodymyr, Rabbe, Md Fazle, Jacobs, Randy N., Avrutin, Vitaliy, Ӧzgür, Ümit, Dhar, Nibir K.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.10.2024; Springer Nature B.V
• Subjects: Aluminum oxide; Bilayers; Characterization and Evaluation of Materials; Chemical vapor deposition; Chemistry and Materials Science; Contact resistance; Electric potential; Electronics and Microelectronics; Fourier transforms; Graphene; Infrared radiation; Instrumentation; Materials Science; Mercury cadmium tellurides; Optical and Electronic Materials; Phosphorus; Photometers; Radiation; Sensors; Silicon substrates; Solid State Physics; Temperature; Topical Collection: 2023 U.S. Workshop on Physics and Chemistry of II-VI Materials; U.S. Workshop on the Physics and Chemistry of II-VI Materials 2023; Voltage; HgCdTe; phototransistor; Photodetector; graphene

A field-effect photodetector structure composed of an Al 2 O 3 -encapsulated bilayer graphene conductive channel attached to an Al 2 O 3 dielectric layer deposited on a HgCdTe absorbing layer on CdTe/Si was studied. Ti/Au ohmic contacts to the graphene layer were used as drain and source electrodes...