Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

A novel CMOS image sensor (CIS) pinned photodiode (PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate (OG) and the temporary storage diffusing (TSD) region, based on which the se...

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Bibliographic Details
Published inChinese physics B Vol. 30; no. 1; p. 18502
Main Authors Yang, Cui, Peng, Guo-Liang, Mao, Wei, Zheng, Xue-Feng, Wang, Chong, Zhang, Jin-Cheng, Hao, Yue
Format Journal Article
LanguageEnglish
Published 01.01.2021
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