APA (7th ed.) Citation

Yang, C., Peng, G., Mao, W., Zheng, X., Wang, C., Zhang, J., & Hao, Y. (2021). Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node. Chinese physics B, 30(1), 18502. https://doi.org/10.1088/1674-1056/abc53f

Chicago Style (17th ed.) Citation

Yang, Cui, Guo-Liang Peng, Wei Mao, Xue-Feng Zheng, Chong Wang, Jin-Cheng Zhang, and Yue Hao. "Novel CMOS Image Sensor Pixel to Improve Charge Transfer Speed and Efficiency by Overlapping Gate and Temporary Storage Diffusing Node." Chinese Physics B 30, no. 1 (2021): 18502. https://doi.org/10.1088/1674-1056/abc53f.

MLA (9th ed.) Citation

Yang, Cui, et al. "Novel CMOS Image Sensor Pixel to Improve Charge Transfer Speed and Efficiency by Overlapping Gate and Temporary Storage Diffusing Node." Chinese Physics B, vol. 30, no. 1, 2021, p. 18502, https://doi.org/10.1088/1674-1056/abc53f.