Modeling of the impact of Se-vacancies on the electrical properties of Cu(In,Ga)Se2 films and junctions

• Published in: Thin solid films Vol. 535; pp. 371 - 375
• Main Authors: Maciaszek, M., Zabierowski, P., Decock, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.05.2013; Elsevier
• Subjects: Applied sciences; Capacitance voltage profiling; CIGS; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities: doping, implantation, distribution, concentration, etc; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Energy; Exact sciences and technology; Metastable defects; Natural energy; Photovoltaic conversion; Physics; Se vacancy; Solar cells. Photoelectrochemical cells; Solar energy; Surface and interface electron states; Surface states, band structure, electron density of states; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; CIGS; Metastable defects; Se vacancy; Capacitance voltage profiling; Gallium; Indium selenides; Metastable states; Doping; Space charge; CV characteristic; Thin films; Shallow level; Modelling; Copper; Depth profiles; Electrical characteristic; Solar cells; Defect density; Vacancies; Defect level; Electrical properties; Theoretical study; Free carrier; Copper selenides; Electronic structure; Fermi level; Carrier density; Gallium selenides; Concentration distribution

In this contribution we aim at a better understanding the influence of metastable VSe defects on electrical characteristics of Cu(In,Ga)Se2-based solar cells. In order to achieve this goal we calculate the distribution of VSe charge states by solving numerically the equations involving transition ra...