Band type engineering using different stacking configurations of anisotropic and isotropic monolayer transition metal dichalcogenides

• Published in: 2d materials Vol. 10; no. 4; pp. 45032 - 45043
• Main Authors: Polumati, Gowtham, Muñiz Martínez, Barbara A, Kolli, Chandra Sekhar Reddy, Selamneni, Venkatarao, Flores Salazar, Mario, Sanchez, David Emanuel, Carreno, Andres Fest, Terrones, Mauricio, De Luna Bugallo, Andres, Sahatiya, Parikshit
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.10.2023
• Subjects: band alignment; CVD; heterojunction photodetector; MoS; ReS

Abstract This work demonstrates the band-type engineering and the detailed charge transport mechanism upon visible light illumination for various configurations of vertically stacked monolayers of MoS 2 -ReS 2 grown by a two-step chemical vapour deposition method. In order to understand the stacking...