Effects of Fe Contamination on the Reliability of Gate Oxide Integrity in Advanced CMOS Technology

Fe contamination has always been one of the most critical issues in the integrated circuit (IC) industry due to its catastrophic effect on device reliability and electrical characteristics. With complementary metal oxide semiconductor (CMOS) technology scaling down, this issue has been attracting mo...

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Published inElectronics (Basel) Vol. 13; no. 12; p. 2391
Main Authors Wang, Fan, Fang, Minghai, Yu, Peng, Zhou, Wenbin, Cao, Kaiwei, Xie, Zhen, Liu, Xiangze, Yan, Feng, Ji, Xiaoli
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.06.2024
Subjects
CMOS
Complementary metal oxide semiconductors
Contamination
Electrons
Failure analysis
Free energy
Gates (circuits)
Heat of formation
High resolution electron microscopy
Integrated circuits
Integrity
Interfaces
Investigations
Metal oxide semiconductors
Metal oxides
Normal distribution
Polysilicon
Precipitates
Reliability
Semiconductor chips
Semiconductor industry
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Abstract Fe contamination has always been one of the most critical issues in the integrated circuit (IC) industry due to its catastrophic effect on device reliability and electrical characteristics. With complementary metal oxide semiconductor (CMOS) technology scaling down, this issue has been attracting more attention. In this paper, the impact of Fe impurity on the reliability of gate oxide integrity (GOI) in advanced CMOS technology is investigated. Intentional contamination of polysilicon gates was conducted in both boron- and phosphorus-doped devices. Failure analysis of the gate oxide was conducted with high-resolution transmission electron microscopy (HRTEM) and the energy dispersive X-ray (EDX) technique. The experimental results disclose that the properties of PMOS are much more sensitive to Fe contamination than those of NMOS. It is suggested that the reason for the above phenomena is that Fe precipitates at the PMOS gate/oxide interface but dissolves uniformly in the NMOS poly gate due to lower formation energy of the FeB pair (0.65 eV) in PMOS than that of the P4-Fe cluster (3.2 eV) in NMOS.
AbstractList Fe contamination has always been one of the most critical issues in the integrated circuit (IC) industry due to its catastrophic effect on device reliability and electrical characteristics. With complementary metal oxide semiconductor (CMOS) technology scaling down, this issue has been attracting more attention. In this paper, the impact of Fe impurity on the reliability of gate oxide integrity (GOI) in advanced CMOS technology is investigated. Intentional contamination of polysilicon gates was conducted in both boron- and phosphorus-doped devices. Failure analysis of the gate oxide was conducted with high-resolution transmission electron microscopy (HRTEM) and the energy dispersive X-ray (EDX) technique. The experimental results disclose that the properties of PMOS are much more sensitive to Fe contamination than those of NMOS. It is suggested that the reason for the above phenomena is that Fe precipitates at the PMOS gate/oxide interface but dissolves uniformly in the NMOS poly gate due to lower formation energy of the FeB pair (0.65 eV) in PMOS than that of the P4-Fe cluster (3.2 eV) in NMOS.
Audience Academic
Author Zhou, Wenbin
Yu, Peng
Yan, Feng
Cao, Kaiwei
Xie, Zhen
Liu, Xiangze
Ji, Xiaoli
Fang, Minghai
Wang, Fan
Author_xml – sequence: 1
  givenname: Fan
  orcidid: 0009-0007-2061-2978
  surname: Wang
  fullname: Wang, Fan
– sequence: 2
  givenname: Minghai
  orcidid: 0009-0007-6296-4912
  surname: Fang
  fullname: Fang, Minghai
– sequence: 3
  givenname: Peng
  orcidid: 0009-0004-3207-5047
  surname: Yu
  fullname: Yu, Peng
– sequence: 4
  givenname: Wenbin
  orcidid: 0009-0006-5998-4456
  surname: Zhou
  fullname: Zhou, Wenbin
– sequence: 5
  givenname: Kaiwei
  surname: Cao
  fullname: Cao, Kaiwei
– sequence: 6
  givenname: Zhen
  orcidid: 0009-0002-1757-1451
  surname: Xie
  fullname: Xie, Zhen
– sequence: 7
  givenname: Xiangze
  surname: Liu
  fullname: Liu, Xiangze
– sequence: 8
  givenname: Feng
  surname: Yan
  fullname: Yan, Feng
– sequence: 9
  givenname: Xiaoli
  surname: Ji
  fullname: Ji, Xiaoli
BookMark eNptUMFKAzEQDVJBrf0CLwHP1SST7W6OpdRaqBS09yWbnbQp20SzUezfm1IPHpwZmOHx3ht4N2Tgg0dC7jh7AFDsETs0KQbvTM-BCwGKX5BrwUo1VkKJwZ_7ioz6fs9yKQ4VsGvSzK3N8p4GS5-QzoJP-uC8Ti54miftkL5i53TjOpeOJ9pCJ6Trb9ciXfqE23jCnafT9kt7gy2dvazf6AbNzocubI-35NLqrsfR7x6SzdN8M3ser9aL5Wy6GhsheRojLworbNOArLjmE60bKUCCqpgqpOamgQIa4KrAyrbScixlIQxvedVomMCQ3J9t32P4-MQ-1fvwGX3-WAMrBfBKSpZZD2fWVndYO29DitrkbvHgTA7WuoxPS6UkAFNlFsBZYGLo-4i2fo_uoOOx5qw-5V__kz_8AMUYfC0
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DBID AAYXX
CITATION
7SP
8FD
8FE
8FG
ABUWG
AFKRA
ARAPS
AZQEC
BENPR
BGLVJ
CCPQU
DWQXO
HCIFZ
L7M
P5Z
P62
PIMPY
PQEST
PQQKQ
PQUKI
PRINS
DOI 10.3390/electronics13122391
DatabaseName CrossRef
Electronics & Communications Abstracts
Technology Research Database
ProQuest SciTech Collection
ProQuest Technology Collection
ProQuest Central (Alumni)
ProQuest Central UK/Ireland
Advanced Technologies & Aerospace Collection
ProQuest Central Essentials
AUTh Library subscriptions: ProQuest Central
Technology Collection
ProQuest One Community College
ProQuest Central
SciTech Premium Collection
Advanced Technologies Database with Aerospace
Advanced Technologies & Aerospace Database
ProQuest Advanced Technologies & Aerospace Collection
Publicly Available Content Database
ProQuest One Academic Eastern Edition (DO NOT USE)
ProQuest One Academic
ProQuest One Academic UKI Edition
ProQuest Central China
DatabaseTitle CrossRef
Publicly Available Content Database
Advanced Technologies & Aerospace Collection
Technology Collection
Technology Research Database
ProQuest Advanced Technologies & Aerospace Collection
ProQuest Central Essentials
ProQuest One Academic Eastern Edition
Electronics & Communications Abstracts
ProQuest Central (Alumni Edition)
SciTech Premium Collection
ProQuest One Community College
ProQuest Technology Collection
ProQuest SciTech Collection
ProQuest Central China
ProQuest Central
Advanced Technologies & Aerospace Database
ProQuest One Academic UKI Edition
ProQuest Central Korea
ProQuest One Academic
Advanced Technologies Database with Aerospace
DatabaseTitleList CrossRef

Publicly Available Content Database
Database_xml – sequence: 1
  dbid: 8FG
  name: ProQuest Technology Collection
  url: https://search.proquest.com/technologycollection1
  sourceTypes: Aggregation Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 2079-9292
ExternalDocumentID A799433097
10_3390_electronics13122391
GroupedDBID 5VS
8FE
8FG
AAYXX
AFKRA
ALMA_UNASSIGNED_HOLDINGS
ARAPS
BENPR
BGLVJ
CCPQU
CITATION
GROUPED_DOAJ
HCIFZ
IAO
ITC
KQ8
MODMG
M~E
OK1
P62
PIMPY
PROAC
7SP
8FD
ABUWG
AZQEC
DWQXO
L7M
PQEST
PQQKQ
PQUKI
PRINS
ID FETCH-LOGICAL-c241t-e155f2fbb3481a16aab42343980954a1cb353b3195e8fd4f1e7452c1d18ba363
IEDL.DBID BENPR
ISSN 2079-9292
IngestDate Thu Oct 10 20:42:23 EDT 2024
Tue Jul 02 03:50:23 EDT 2024
Fri Aug 23 05:01:05 EDT 2024
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 12
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c241t-e155f2fbb3481a16aab42343980954a1cb353b3195e8fd4f1e7452c1d18ba363
ORCID 0009-0006-5998-4456
0009-0004-3207-5047
0009-0007-6296-4912
0009-0002-1757-1451
0009-0007-2061-2978
OpenAccessLink https://www.proquest.com/docview/3072318440?pq-origsite=%requestingapplication%
PQID 3072318440
PQPubID 2032404
ParticipantIDs proquest_journals_3072318440
gale_infotracacademiconefile_A799433097
crossref_primary_10_3390_electronics13122391
PublicationCentury 2000
PublicationDate 2024-06-01
PublicationDateYYYYMMDD 2024-06-01
PublicationDate_xml – month: 06
  year: 2024
  text: 2024-06-01
  day: 01
PublicationDecade 2020
PublicationPlace Basel
PublicationPlace_xml – name: Basel
PublicationTitle Electronics (Basel)
PublicationYear 2024
Publisher MDPI AG
Publisher_xml – name: MDPI AG
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SSID ssj0000913830
Score 2.3317783
Snippet Fe contamination has always been one of the most critical issues in the integrated circuit (IC) industry due to its catastrophic effect on device reliability...
SourceID proquest
gale
crossref
SourceType Aggregation Database
StartPage 2391
SubjectTerms CMOS
Complementary metal oxide semiconductors
Contamination
Electrons
Failure analysis
Free energy
Gates (circuits)
Heat of formation
High resolution electron microscopy
Integrated circuits
Integrity
Interfaces
Investigations
Metal oxide semiconductors
Metal oxides
Normal distribution
Polysilicon
Precipitates
Reliability
Semiconductor chips
Semiconductor industry
Title Effects of Fe Contamination on the Reliability of Gate Oxide Integrity in Advanced CMOS Technology
URI https://www.proquest.com/docview/3072318440
Volume 13
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB60vehBfGJ9sQfBi6HZ7CbZnKRKaxWq4gN6C7ubDfTS1raCXvztzjRbqyBCLpsHgW93dr6ZTL4BOOXk94rIBToKbSBlKoMswSGXkVahdSKaB4q9u6T7Im_7cd8n3Ka-rHKxJ8436mJkKUfexLWIjykpw4vxa0Bdo-jrqm-hsQr1CCOFsAb1y_bdw-N3loVUL5UIK7khgfF9c9ldZsoFR-eY8V8u6e-Nee5tOpuw4Wkia1XzugUrbrgN6z_EA3fAVMLDUzYqWccxkpnSVNdCSDM8kNkxKjiuhLg_6DZKlbH790Hh2M1cJoLOD4as5QsB2FXv_okts-278NxpP191A98xIbDoiWeBQ3ZQRqUx9Hut5onWBukScg6FTEpqbo2IhUGri50qC1lyl8o4srzgymiRiD2oDUdDtw8sdKIwcZmaWFopkjSzNgmdUhYpmkqMacD5ArN8XOli5BhPEMT5HxA34IxwzclqZhNttS_-x5eR_lTeSrNMChFmaQOOFtDn3pym-XLyD_6_fAhrEbKOqpbrCGqzyZs7RtYwMyewqjrXJ36B4Kj32f4CEhDEYg
link.rule.ids 315,783,787,12777,21400,27936,27937,33385,33756,43612,43817,74363,74630
linkProvider ProQuest
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEF60HtSD-MRq1T0IXgzNZjfJ5iSlGFvt42CF3sLuZgO9tLWpoP_emSS1CkXIJS8C3-7MfDuZ_YaQW4ZxL_WsozzXOEKEwokCOGXCU9I1lnvFQrE_CDpv4nnsj6uEW16VVa58YuGo05nBHHkT5iK8JoVwH-bvDnaNwr-rVQuNbbIjOMRq3CkeP_3kWFDzUnK3FBvisLpvrnvL5IwzCI0R-xOQNrvlItbEh-SgIom0VY7qEdmy02Oy_0s68IToUnY4p7OMxpaiyJTCqhbEmcIBvI5iuXEpw_2Fj2GijA4_J6ml3UIkAq9PprRVlQHQdn_4Ste59lMyih9H7Y5T9UtwDMThpWOBG2RepjVurlUsUEoDWQLGIYFHCcWM5j7XYHO-lVkqMmZD4XuGpUxqxQN-RmrT2dSeE-panmo_C7UvDAAbRsYErpXSAEGTgdZ1cr_CLJmXqhgJrCYQ4mQDxHVyh7gmaDPLhTKqKv2Hj6H6VNIKo0hw7kZhnTRW0CeVMeXJeugv_r99Q3Y7o34v6XUHL5dkzwP-UVZ1NUhtufiwV8Aflvq6mCTf54TD1g
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB60guhBfGJ97kHwYmg2u0k2J6nVYn3U4gO8hd3NBry0aivov3em2VqFIuSSF4HJzM63s99-A3DEKe8VkQt0FNpAylQGWYKnXEZahdaJaDxRvO0ml0_y6jl-9vynoadVTsbE8UBdDCzVyBvoi_iakjJslJ4W0Ttvn76-BdRBilZafTuNeVhIZSLCGiycXXR79z8VF1LAVCKspIcEzvUb004zQy44JsqM_0lPswfpceZpr8KKh4ysWf3jNZhz_XVY_iUkuAGmEiEeskHJ2o6R5JQmjgtZneGBKI8R-bgS5f6ix6hsxu4-XwrHOmPJCLr-0mdNTwpgrdu7BzatvG_CY_visXUZ-O4JgcWsPAocIoUyKo2hrbaaJ1obhE6IPxSiKqm5NSIWBiMwdqosZMldKuPI8oIro0UitqDWH_TdNrDQicLEZWpiaaVI0szaJHRKWYRrKjGmDicTm-WvlUZGjnMLMnE-w8R1OCa75hRBo3dttd8IgB8jLaq8mWaZFCLM0jrsTUyf-9Aa5lNH2Pn_9iEsoofkN53u9S4sRQhGKorXHtRG7x9uH8HEyBx4L_kGP9jJcw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Effects+of+Fe+Contamination+on+the+Reliability+of+Gate+Oxide+Integrity+in+Advanced+CMOS+Technology&rft.jtitle=Electronics+%28Basel%29&rft.au=Wang%2C+Fan&rft.au=Fang%2C+Minghai&rft.au=Yu%2C+Peng&rft.au=Zhou%2C+Wenbin&rft.date=2024-06-01&rft.pub=MDPI+AG&rft.eissn=2079-9292&rft.volume=13&rft.issue=12&rft.spage=2391&rft_id=info:doi/10.3390%2Felectronics13122391&rft.externalDBID=HAS_PDF_LINK
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2079-9292&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2079-9292&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2079-9292&client=summon